Non-volatile memory systems with multi-write direction memory units

• US 9,728,262 B2
• Filed: 10/30/2015
• Issued: 08/08/2017
• Est. Priority Date: 10/30/2015
• Status: Active Grant

• Current Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Original Assignee: SanDisk Technologies LLC (Western Digital Corporation)
• Inventors: Baran, Ivan, Palityka, Mikhail, Lee, Aaron, Kochar, Mrinal, Ea, Dennis, Ng, Yew Yin, Bhalerao, Abhijeet
• Primary Examiner(s): Bui, Tha-O H
• Application Number:
  US14/928,509
• Publication Number:
  US 20170125104A1
• Time in Patent Office: 648 Days
• Field of Search: 36518511, 36518503, 36518517, 36518533
• CPC Class Codes: G11C 11/5628 Programming or writing circuits; Data input circuits
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/08 Address circuits; Decoders; Word-line control circuits
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/14 Circuits for erasing electrically, e.g. erase voltage switching circuits
• CPC Class Codes: G11C 16/24 Bit-line control circuits
• CPC Class Codes: G11C 16/3427 Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
• CPC Class Codes: G11C 16/349 Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
• CPC Class Codes: G11C 16/3495 Circuits or methods to detect or delay wearout of nonvolatile EPROM or EEPROM memory devices, e.g. by counting numbers of erase or reprogram cycles, by using multiple memory areas serially or cyclically
• CPC Class Codes: G11C 2211/5648 Multilevel memory programming, reading or erasing operations wherein the order or sequence of the operations is relevant

Abstract

Non-volatile memory systems with multi-write direction memory units are disclosed. In one implementation an apparatus comprises a non-volatile memory and a controller in communication with the non-volatile memory. The controller is configured to select an empty memory block of the non-volatile memory for the storage of data; examine an identifier associated with the memory block to determine a write direction for the storage of data; and write data to the memory block beginning with an initial word line of the memory block or a last word line of the memory block dependent on the write direction. The controller is further configured to erase the memory unit and, in response to erasing the memory unit, modify the identifier to change the write direction for a subsequent write of data to the memory block.

Claims

1. In a controller of a non-volatile memory system that is coupled with a host device, a method comprising:

selecting a memory unit of a non-volatile memory of the non-volatile memory system that is empty for storage of data;

examining an identifier associated with the memory unit to determine a write direction for the storage of data in the memory unit, the write direction indicating whether to store data to the memory unit in one of a forward write direction or a reverse write direction; and

writing data to the memory unit in the write direction;

wherein writing data to the memory unit in the forward write direction comprises;

writing data to the memory unit beginning with an initial word line of the memory unit and continuing to write data to a next sequential word line in a direction of a last word line of the memory unit while control logic and amps of the non-volatile memory are coupled to a drain bus of the memory unit, and a common potential bus of the non-volatile memory is coupled to a source bus of the memory unit; and

wherein writing data to the memory unit in the reverse write direction comprises;

writing data to the memory unit beginning with the last word line of the memory unit and continuing to write data to a next sequential word line in a direction of the initial word line of the memory unit while the control logic and amps of the non-volatile memory are coupled to the source bus of the memory unit, and the common potential bus of the non-volatile memory is coupled to the drain bus of the memory unit.

2. The method of claim 1, further comprising:

erasing the memory unit; and

modifying the identifier to change the write direction for a subsequent write of data to the memory unit.

3. The method of claim 1, wherein the memory unit is a memory block.

4. The method of claim 1, wherein the identifier is a parity bit of a program/erase cycle counter associated with the memory unit.

5. The method of claim 1, wherein the non-volatile memory comprises a silicon substrate and a plurality of memory cells forming at least two memory layers vertically disposed with respect to each other to form a monolithic three-dimensional structure, wherein at least one layer is vertically disposed with respect to the silicon substrate.

6. An apparatus comprising:

a non-volatile memory; and

a controller in communication with the non-volatile memory, the controller configured to;

select a memory block of the non-volatile memory that is empty for storage of data;

examine a counter associated with the memory block to determine a write direction for the storage of data;

dependent on the write direction;

write data to the memory block beginning with an initial word line of the memory block and continue to write data to a next sequential word line in a direction of a last word line of the memory block while control logic and amps of the non-volatile memory are coupled to a drain bus of the memory block, and a common potential bus of the non-volatile memory is coupled to a source bus of the memory block;

or

write data to the memory block beginning with the last word line of the memory block and continue to write data to a next sequential word line in a direction of the initial word line of the memory block while the control logic and amps of the non-volatile memory are coupled to the source bus of the memory block, and the common potential bus of the non-volatile memory is coupled to the drain bus of the memory block.

7. The apparatus of claim 6, wherein the controller is further configured to:

erase the memory unit; and

increment the counter to change the write direction for a subsequent write of data to the memory block.

8. The apparatus of claim 6, wherein the non-volatile memory comprises a silicon substrate and a plurality of memory cells forming at least two memory layers vertically disposed with respect to each other to form a monolithic three-dimensional structure, wherein at least one layer is vertically disposed with respect to the silicon substrate.

9. In a controller of a non-volatile memory system that is coupled with a host device, a method comprising:

determining whether to write data to a memory unit of a non-volatile memory of the non-volatile memory system in a forward write direction or a reverse write direction based on a previous write direction with which the controller wrote data to the memory unit; and

writing data to the memory unit beginning with one of an initial word line or a last word line of the memory unit based on the determination of whether to write data to the memory unit in the forward direction or the reverse direction;

wherein writing data to the memory unit in the forward write direction comprises writing data to the memory unit beginning with the initial word line of the memory unit and continuing to write data to a next sequential word line in a direction of the last word line of the memory unit while control logic and amps of the non-volatile memory are coupled to a drain bus of the memory block, and a common potential bus of the non-volatile memory is coupled to a source bus of the memory block; and

wherein writing data to the memory unit in the reverse write direction comprises writing data to the memory unit beginning with the last word line of the memory unit and continuing to write data to a next sequential word line in a direction of the initial word line of the memory unit while the control logic and amps of the non-volatile memory are coupled to the source bus of the memory block, and the common potential bus of the non-volatile memory is coupled to the drain bus of the memory block.

10. The method of claim 9, wherein the memory unit is a memory block.

11. The method of claim 9, wherein determining whether to write data to the memory unit in a forward direction or a reverse direction comprises:

examining an identifier associated with the memory unit that indicates whether to write data to the memory unit beginning with the initial word line or the last word line.

12. The method of claim 11, wherein the identifier is a counter.

13. The method of claim 11, wherein the identifier is a parity bit of a program/erase cycle counter of the memory unit.

14. The method of claim 11, further comprising:

erasing the memory unit; and

modifying the identifier to reverse the write direction for a subsequent write of data to the memory direction.