Organic film composition, process for forming organic film, patterning process, and compound

• US 9,728,420 B2
• Filed: 04/05/2016
• Issued: 08/08/2017
• Est. Priority Date: 05/14/2015
• Status: Active Grant

• Current Assignee: Shin-Etsu Chemical Company Limited
• Original Assignee: Shin-Etsu Chemical Company Limited
• Inventors: Maeda, Kazunori, Kori, Daisuke, Kikuchi, Rie, Noda, Kazumi, Ogihara, Tsutomu
• Primary Examiner(s): Hamilton, Cynthia
• Application Number:
  US15/091,336
• Publication Number:
  US 20160336189A1
• Time in Patent Office: 490 Days
• CPC Class Codes: C07C 219/14 having at least one of the hydroxy groups esterified by a carboxylic acid having the esterifying carboxyl group bound to a carbon atom of a six-membered aromatic ring
• CPC Class Codes: C07C 2603/18 Fluorenes; Hydrogenated fluorenes
• CPC Class Codes: C07C 2603/24 Anthracenes; Hydrogenated anthracenes
• CPC Class Codes: C07C 317/22 with sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
• CPC Class Codes: C07C 69/33 esterified with hydroxy compounds having more than three hydroxy groups esters of sugars C07H
• CPC Class Codes: C07C 69/76 Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
• CPC Class Codes: C07C 69/84 of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
• CPC Class Codes: C07C 69/94 of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques encapsulating layers H01L21/56; After treatment of these layers; Selection of materials for these layers
• CPC Class Codes: H01L 21/31056 the removal being a selective chemical etching step, e.g. selective dry etching through a mask
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32 using masks
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence

Abstract

An organic film composition including a compound represented by the following general formula (1),

• • wherein n1 and n2 each independently represent 0 or 1; “W” represents a single bond or any of structures represented by the following formula (2); R₁ represents any of structures represented by the following general formula (3); m1 and m2 each independently represent an integer of 0 to 7, with the proviso that m1+m2 is 1 to 14.

There can be provided an organic film composition for forming an organic film having dry etching resistance as well as advanced filling/planarizing characteristics.

Claims

1. An organic film composition comprising a compound represented by the following general formula (4),

2. The organic film composition according to claim 1, wherein “

W”

represents a single bond or any of structures represented by the following formula (5),

3. The organic film composition according to claim 2, the compound represented by the general formula (4) has two or more Q₁ in the molecule, and contains one or more structures represented by the following general formula (6) and one or more structures represented by the following general formula (7) respectively as Q₁,

**—

R_h 

 

(6)

wherein “

**”

represents a bonding site to the carbonyl group;

R_h represents a linear or branched saturated hydrocarbon group having 1 to 30 carbon atoms, and the methylene group constituting R_h may be substituted by an oxygen atom or a carbonyl group,

4. The organic film composition according to claim 1, the compound represented by the general formula (4) has two or more Q₁ in the molecule, and contains one or more structures represented by the following general formula (6) and one or more structures represented by the following general formula (7) respectively as Q₁,

**—

R_h 

 

(6)

wherein “

**”

represents a bonding site to the carbonyl group;

R_h represents a linear or branched saturated hydrocarbon group having 1 to 30 carbon atoms, and the methylene group constituting R_h may be substituted by an oxygen atom or a carbonyl group,

5. The organic film composition according to claim 1, further comprising at least one of (A) an acid generator, (B) a cross-linking agent, (C) a surfactant, and (D) an organic solvent.

6. A process for forming an organic film which acts as a resist under layer film of a multilayer resist film used in lithography or a planarizing film for manufacturing a semiconductor apparatus, comprising:

coating a substrate to be processed with the organic film composition according to claim 1, and

subjecting the organic film composition to heat treatment at a temperature of 100°

C. or higher and 600°

C. or lower for 10 to 600 seconds to form a cured film.

7. The process for forming an organic film according to claim 6, wherein the substrate to be processed is a substrate to be processed having a structure or step(s) each with a height of 30 nm or more.

8. A process for forming an organic film which acts as a resist under layer film of a multilayer resist film used in lithography or a planarizing film for manufacturing a semiconductor apparatus, comprising:

coating a substrate to be processed with the organic film composition according to claim 1, and

baking the organic film composition under an atmosphere with an oxygen concentration of 0.1% or more and 21% or less to form a cured film.

9. A patterning process which is a process for forming a pattern on a substrate to be processed, comprising at least the steps of:

forming a resist under layer film on the substrate to be processed by using the organic film composition according to claim 1;

forming a resist middle layer film on the resist under layer film by using a resist middle layer film composition containing a silicon atom;

forming a resist upper layer film on the resist middle layer film by using a resist upper layer film composition comprising a photoresist composition, to form a multilayer resist film;

forming a resist pattern on the resist upper layer film by exposing a pattern circuit region of the resist upper layer film and then developing the same with a developer;

forming a resist middle layer film pattern by etching the resist middle layer film using the obtained resist pattern as an etching mask;

forming a resist under layer film pattern by etching the resist under layer film using the obtained resist middle layer film pattern as an etching mask; and

further

forming a pattern on the substrate to be processed by etching the substrate to be processed using the obtained resist under layer film pattern as an etching mask.

10. The patterning process according to claim 9, wherein the step of etching the resist under layer film using the resist middle layer film as an etching mask is performed by using an etching gas mainly comprising an oxygen gas or a hydrogen gas.

11. The patterning process according to claim 9, wherein the substrate to be processed is a substrate to be processed having a structure or step(s) each with a height of 30 nm or more.

12. A patterning process which is a process for forming a pattern on a substrate to be processed, comprising at least the steps of:

forming a resist under layer film on the substrate to be processed by using the organic film composition according to claim 1;

forming an inorganic hard mask middle layer film selected from any one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist under layer film;

forming a resist upper layer film on the inorganic hard mask middle layer film by using a resist upper layer film composition comprising a photoresist composition, to form a multilayer resist film;

forming a resist pattern on the resist upper layer film by exposing a pattern circuit region of the resist upper layer film and then developing the same with a developer;

forming an inorganic hard mask middle layer film pattern by etching the inorganic hard mask middle layer film using the obtained resist pattern as an etching mask;

forming a resist under layer film pattern by etching the resist under layer film using the obtained inorganic hard mask middle layer film pattern as an etching mask; and

further

forming a pattern on the substrate to be processed by etching the substrate to be processed using the obtained resist under layer film pattern as an etching mask.

13. The patterning process according to claim 12, wherein the inorganic hard mask middle layer film is formed by a CVD method or an ALD method.

14. A patterning process which is a process for forming a pattern on a substrate to be processed, comprising at least the steps of:

forming a resist under layer film on the substrate to be processed by using the organic film composition according to claim 1;

forming an inorganic hard mask middle layer film selected from any one of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film on the resist under layer film;

forming an organic antireflection film on the inorganic hard mask middle layer film;

forming a resist upper layer film on the organic antireflection film by using a resist upper layer film composition comprising a photoresist composition, to form a multilayer resist film;

forming a resist pattern on the resist upper layer film by exposing a pattern circuit region of the resist upper layer film and then developing the same with a developer;

forming an inorganic hard mask middle layer film pattern by etching the organic antireflection film and the inorganic hard mask middle layer film using the obtained resist pattern as an etching mask;

forming a resist under layer film pattern by etching the resist under layer film using the obtained inorganic hard mask middle layer film pattern as an etching mask; and

further

forming a pattern on the substrate to be processed by etching the substrate to be processed using the obtained resist under layer film pattern as an etching mask.

15. A compound represented by the following general formula (4),