Self-aligned 3-D epitaxial structures for MOS device fabrication
First Claim
1. A method for forming a fin-based transistor structure, the method comprising:
- forming a fin on a substrate, the fin extending from the substrate;
forming shallow trench isolation material on opposing sides of the fin;
recessing the fin to provide a first recess;
forming a substitute fin including strained silicon-germanium (SiGe) in the first recess, the substitute fin comprising a channel of the transistor structure, the substitute fin having a width of less than 30 nanometers, a height of greater than 35 nanometers, and a germanium concentration of greater than 40%; and
forming a gate over three surfaces of the substitute fin to form a tri-gate structure, wherein the substitute fin includes strained SiGe throughout all of the substitute fin after the gate is formed over three surfaces of the substitute fin.
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Accused Products
Abstract
Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems within the same integrated circuit die. In accordance with one example embodiment, sacrificial fins are removed and replaced with custom semiconductor material of arbitrary composition and strain suitable for a given application. In one such case, each of a first set of the sacrificial fins is recessed or otherwise removed and replaced with a p-type material, and each of a second set of the sacrificial fins is recessed or otherwise removed and replaced with an n-type material. The p-type material can be completely independent of the process for the n-type material, and vice-versa. Numerous other circuit configurations and device variations are enabled using the techniques provided herein.
58 Citations
30 Claims
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1. A method for forming a fin-based transistor structure, the method comprising:
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forming a fin on a substrate, the fin extending from the substrate; forming shallow trench isolation material on opposing sides of the fin; recessing the fin to provide a first recess; forming a substitute fin including strained silicon-germanium (SiGe) in the first recess, the substitute fin comprising a channel of the transistor structure, the substitute fin having a width of less than 30 nanometers, a height of greater than 35 nanometers, and a germanium concentration of greater than 40%; and forming a gate over three surfaces of the substitute fin to form a tri-gate structure, wherein the substitute fin includes strained SiGe throughout all of the substitute fin after the gate is formed over three surfaces of the substitute fin. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An integrated circuit (IC) comprising:
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a first substitute fin including strained silicon-germanium (SiGe) throughout all of the first substitute fin, the first substitute fin extending from a substrate and comprising a transistor channel area, the first substitute fin having a width of less than 30 nanometers, a height of greater than 35 nanometers, and a germanium concentration of greater than 40%; a second fin extending from the substrate and comprising a transistor channel area; and a gate stack over three surfaces of the first substitute fin to form three gates. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. An integrated circuit (IC) comprising:
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a first substitute fin including strained silicon-germanium (SiGe) throughout all of the first substitute fin, the first substitute fin extending from a substrate and comprising a channel area, the first substitute fin having a width of less than 30 nanometers, a height of greater than 35 nanometers, and a germanium concentration of greater than 40%; a second fin extending from the substrate and comprising a channel area; shallow trench isolation material on opposing sides of each of the first and second fins; a gate stack on multiple channel area surfaces of the first and second fins and extending above the shallow trench isolation material so as to provide multi-gates per fin, wherein the gate stack is over three surfaces of the first substitute fin to form three gates; and source/drain regions adjacent the channel area of the first substitute fin; wherein at least one common horizontal plane cuts through both the channel area of the first substitute fin and the channel area of the second fin. - View Dependent Claims (28, 29, 30)
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Specification