Multiple bond via arrays of different wire heights on a same substrate

• US 9,728,527 B2
• Filed: 10/28/2015
• Issued: 08/08/2017
• Est. Priority Date: 11/22/2013
• Status: Active Grant

• Current Assignee: Invensas Corporation
• Original Assignee: Invensas Corporation
• Inventors: Uzoh, Cyprian Emeka, Katkar, Rajesh
• Primary Examiner(s): Sandvik, Benjamin
• Assistant Examiner(s): Assouman, Herve
• Application Number:
  US14/925,807
• Publication Number:
  US 20160049390A1
• Time in Patent Office: 650 Days
• Field of Search: 257712, 257777, 257778, 257737, 257738, 257734, 257773, 257774, 257713
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/02311 Additive methods
• CPC Class Codes: H01L 2224/02317 by local deposition
• CPC Class Codes: H01L 2224/02371 connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/02372 connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/0239 Material of the redistribution layers
• CPC Class Codes: H01L 2224/0331 in liquid form
• CPC Class Codes: H01L 2224/0332 Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/0333 in solid form
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03452 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/03462 Electroplating
• CPC Class Codes: H01L 2224/03464 Electroless plating
• CPC Class Codes: H01L 2224/0347 using a lift-off mask
• CPC Class Codes: H01L 2224/03614 by chemical means only
• CPC Class Codes: H01L 2224/0391 Forming a passivation layer after forming the bonding area
• CPC Class Codes: H01L 2224/03912 the bump being used as a mask for patterning the bonding area
• CPC Class Codes: H01L 2224/03914 : the bonding area, e.g. under bump metallisation [UBM], being used as a mask for patterning other parts
• CPC Class Codes: H01L 2224/0401 : Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 : Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05 : of an individual bonding area
• CPC Class Codes: H01L 2224/05111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/05124 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05184 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05547 : comprising a core and a coating
• CPC Class Codes: H01L 2224/05565 : Only outside the bonding interface of the bonding area
• CPC Class Codes: H01L 2224/05568 : the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05569 : the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05611 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/05616 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/05624 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05669 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/08146 : the bonding area connecting to a via connection in the body
• CPC Class Codes: H01L 2224/0823 : the bonding area connecting to a pin of the item
• CPC Class Codes: H01L 2224/1134 : Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/11462 : Electroplating
• CPC Class Codes: H01L 2224/11464 : Electroless plating
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/11903 : using different masks
• CPC Class Codes: H01L 2224/1191 : Forming a passivation layer after forming the bump connector
• CPC Class Codes: H01L 2224/13 : of an individual bump connector
• CPC Class Codes: H01L 2224/13022 : the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13023 : the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13082 : Two-layer arrangements
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13113 : Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13124 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/13184 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/13565 : Only outside the bonding interface of the bump connector
• CPC Class Codes: H01L 2224/13616 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/1403 : Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/14131 : being uniform, i.e. having a uniform pitch across the array
• CPC Class Codes: H01L 2224/14134 : covering only portions of the surface to be connected
• CPC Class Codes: H01L 2224/16145 : the bodies being stacked
• CPC Class Codes: H01L 2224/16146 : the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16148 : the bump connector connecting to a bonding area protruding from the surface
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 : the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/17181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/24147 : the HDI interconnect not connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted, e.g. the upper semiconductor or solid-state body being mounted in a cavity or on a protrusion of the lower semiconductor or solid-state body
• CPC Class Codes: H01L 2224/24227 : the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
• CPC Class Codes: H01L 2224/244 : Connecting portions
• CPC Class Codes: H01L 2224/32145 : the bodies being stacked
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/3303 : Layer connectors having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/33181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/45015 : being circular
• CPC Class Codes: H01L 2224/45099 : Material
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45565 : Single coating layer
• CPC Class Codes: H01L 2224/45616 : Lead (Pb) as principal constituent
• CPC Class Codes: H01L 2224/4805 : Shape
• CPC Class Codes: H01L 2224/48108 : the connector not being orthogonal to a side surface of the semiconductor or solid-state body, e.g. fanned-out connectors, radial layout
• CPC Class Codes: H01L 2224/48149 : the wire connector connecting to a bonding area protruding from the surface
• CPC Class Codes: H01L 2224/4903 : Connectors having different sizes, e.g. different diameters
• CPC Class Codes: H01L 2224/49426 : on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73201 : on the same surface
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81192 : wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2225/06506 : Wire or wire-like electrical connections between devices
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06524 : Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06548 : Conductive via connections through the substrate, container, or encapsulation
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/5384 : Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors H01L23/5383, H01L23/5385 take precedence; pins attached to insulating substrates H01L23/49811
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/17 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/43 : Manufacturing methods
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/89 : using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15192 : Resurf arrangement of the internal vias
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/16251 : Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/20751 : larger or equal to 10 microns less than 20 microns
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/20753 : larger or equal to 30 microns less than 40 microns
• CPC Class Codes: H01L 2924/20754 : larger or equal to 40 microns less than 50 microns
• CPC Class Codes: H01L 2924/20755 : larger or equal to 50 microns less than 60 microns
• CPC Class Codes: H01L 2924/20756 : larger or equal to 60 microns less than 70 microns
• CPC Class Codes: H01L 2924/20757 : larger or equal to 70 microns less than 80 microns
• CPC Class Codes: H01L 2924/20758 : larger or equal to 80 microns less than 90 microns
• CPC Class Codes: H01L 2924/20759 : larger or equal to 90 microns less than 100 microns
• CPC Class Codes: H01L 2924/2076 : equal to or larger than 100 microns
• CPC Class Codes: H01L 2924/381 : Pitch distance
• CPC Class Codes: H01L 2924/3841 : Solder bridging
• CPC Class Codes: H01L 2924/386 : Wire effects

Abstract

An apparatus relating generally to a substrate is disclosed. In such an apparatus, a first bond via array has first wires extending from a surface of the substrate. A second bond via array has second wires extending from the surface of the substrate. The first bond via array is disposed at least partially within the second bond via array. The first wires of the first bond via array are of a first height. The second wires of the second bond via array are of a second height greater than the first height for coupling of at least one die to the first bond via array at least partially disposed within the second bond via array.

Claims

1. A method, comprising:

obtaining a substrate;

feeding wire from a wire spool control head for;

forming a first bond via array of first wire bond wires (“

first wires”

) extending from a surface of the substrate having rows and columns of the first wires; and

forming a second bond via array of second wire bond wires (“

second wires”

) extending from the surface of the substrate having rows and columns of the second wires;

wherein the first bond via array and the second bond via array are external to the substrate;

wherein the first bond via array is disposed within a region of the second bond via array;

wherein the first wires of the first bond via array are of a first height; and

wherein the second wires of the second bond via array are of a second height greater than the first height for a package-on-package configuration;

wherein a first pitch of the first wires of the first bond via array is less than 0.5 mm; and

wherein a second pitch of the second wires of the second bond via array is a range of approximately 0.01 to 0.5 mm.

2. The method according to claim 1, further comprising:

coupling a first die to the first bond via array; and

coupling a second die to the second bond via array;

wherein the second die is disposed over the first die.

3. The method according to claim 2, wherein the first die and at least a portion of the second die are located within a perimeter of the second bond via array.

4. The method according to claim 2, further comprising coupling opposing surfaces of the first die and the second die to one another.

5. The method according to claim 2, further comprising attaching the first wires of the first bond via array and the second wires of the second bond via array by fusion bonding to the surface of the substrate.

6. The method according to claim 2, wherein a portion of the second wires are formed as angled wires with an angle less than approximately 90 degrees with reference to the surface of the substrate.

7. The method according to claim 2, wherein the first die and the second die are coupled to one another.

8. The method according to claim 7, wherein the first die and the second die are coupled to one another by die-to-die interconnects.

9. The method according to claim 7, wherein the first die and the second die are coupled to one another by a spacer layer.

10. The method according to claim 7, wherein the first die and the second die are coupled to one another by a redistribution layer.

11. The method according to claim 2, wherein the package-on-package configuration comprises:

the first die coupled to first ends of the first wires on a backside surface of the first die as a downward facing die; and

the second die coupled to second ends of the second wires on a backside surface of the second die as an upward facing die.

12. The method according to claim 2, wherein the package-on-package configuration comprises:

the first die coupled to first ends of the first wires on a backside surface of the first die as a downward facing die; and

the second die coupled to second ends of the second wires on a backside surface of the second die as a downward facing die.

13. The method according to claim 2, wherein the package-on-package configuration comprises:

the first die coupled to first ends of the first wires on a front side surface of the first die as an upward facing die; and

the second die coupled to second ends of the second wires on a backside surface of the second die as a downward facing die; and

wherein a backside surface of the first die is coupled to the backside surface of the second die by die-to-die interconnects.

14. The method according to claim 1, wherein:

the first pitch of the first wires of the first bond via array is a first wire diameter of the first wires; and

the second pitch of the second wires of the second bond via array is a second wire diameter of the second wires.

15. The method according to claim 14, wherein the first wire diameter is smaller than the second wire diameter.

16. The method according to claim 14, wherein a portion of at least one of the first wires or the second wires includes angled wires thereof.

17. The method according to claim 1, further comprising:

coupling an integrated circuit die to the first bond via array;

coupling a redistribution layer to the second bond via array; and

wherein the redistribution layer is disposed over the integrated circuit die.

20. The method according to claim 1, wherein the first wires and the second wires are made of different materials to provide at least one of different conductivities or e-moduli as between the first wires and the second wires.

18. A method, comprising:

feeding wire from a wire spool control head for;

forming a first bond via array of first wire bond wires extending from a surface of a die having rows and columns of the first wire bond wires; and

forming a second bond via array of second wire bond wires extending from a surface of a redistribution layer having rows and columns of the second wire bond wires;

wherein the first bond via array and the second bond via array are external to the die and the redistribution layer, respectively;

wherein the first bond via array is disposed within a region of the second bond via array;

wherein the first wire bond wires of the first bond via array are of a first height;

wherein the second wire bond wires of the second bond via array are of a second height greater than the first height for a package-on-package configuration;

wherein a first pitch of the first wire bond wires of the first bond via array is in less than 0.5 mm; and

wherein a second pitch of the second wire bond wires of the second bond via array is a range of approximately 0.01 to 0.5 mm.

19. A method, comprising:

feeding wire from a wire spool control head for;

forming a first bond via array of first wire bond wires extending from a surface of a first die having rows and columns of the first wire bond wires; and

forming a second bond via array of second wire bond wires extending from a surface of a second die having rows and columns of the second wire bond wires;

wherein the first bond via array and the second bond via array are external to the first die and the second die, respectively;

wherein the first bond via array is disposed within a region of the second bond via array;

wherein the first wire bond wires of the first bond via array are of a first height;

wherein the second wire bond wires of the second bond via array are of a second height greater than the first height for a package-on-package configuration;

wherein a first pitch of the first wire bond wires of the first bond via array is less than 0.5 mm; and

wherein a second pitch of the second wire bond wires of the second bond via array is a range of approximately 0.01 to 0.5 mm.