Semiconductor sensor device

• US 9,728,567 B2
• Filed: 12/02/2013
• Issued: 08/08/2017
• Est. Priority Date: 12/02/2013
• Status: Active Grant

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Shiu, Jian-Bin, Yu, Wen-Zheng
• Primary Examiner(s): Luke, Daniel
• Assistant Examiner(s): RAHMAN, KHATIB A
• Application Number:
  US14/093,605
• Publication Number:
  US 20150155321A1
• Time in Patent Office: 1,345 Days
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

A semiconductor sensor device is disclosed. The semiconductor sensor device includes a plurality of pixels and a phase grating structure. The phase grating structure has periodically arranged patterns and is disposed on the pixels.

Claims

1. A semiconductor sensor device, being a capacitance silicon type fingerprint sensor or a RF field type fingerprint sensor, and comprising:

a plurality of pixels, wherein the plurality of the pixels are signal resolutions of the capacitance silicon type fingerprint sensor or the RF field type fingerprint sensor;

a protection layer formed on the pixels; and

a phase grating structure having periodically arranged patterns disposed on the pixels, wherein the periodically arranged patterns are formed in the protection layer.

2. The semiconductor sensor device according to claim 1, wherein the periodically arranged patterns have dimensions of 1-2.5 μ

m.

3. The semiconductor sensor device according to claim 1, wherein the phase grating structure has a first region formed of protrusions and a second region formed of indentations, and the periodically arranged patterns are the protrusions or the indentations.

4. The semiconductor sensor device according to claim 3, wherein the first region has a refractive index different from that of the second region.

5. The semiconductor sensor device according to claim 1, wherein the periodically arranged patterns have non-uniform heights.

6. The semiconductor sensor device according to claim 1, wherein the periodically arranged patterns further comprise at least two sets of periodic patterns different from each other.

7. The semiconductor sensor device according to claim 1, wherein the periodically arranged patterns have a height, and the ratio of the height to a dimension of the periodically arranged patterns is about 1:

1.

8. The semiconductor sensor device according to claim 1, wherein the periodically arranged patterns are polygonal shaped, circular shaped, elliptical shaped, strip shaped, hollow shaped, grid-shaped, or serrated strip shaped.

9. The semiconductor sensor device according to claim 1, wherein the periodically arranged patterns of the phase grating structure are aligned with each other and uniform in size and shape.

10. The semiconductor sensor device according to claim 1, further comprising:

a planarization layer formed on the pixels.

11. The semiconductor sensor device according to claim 10, further comprising:

a passivation layer formed on the planarization layer;

a recap oxide layer formed on the passivation layer; and

a nitride layer formed on the recap oxide layer.

12. The semiconductor sensor device according to claim 11, wherein the periodically arranged patterns are formed in at least one of the passivation layer, the recap oxide layer, or the nitride layer.

13. The semiconductor sensor device according to claim 1, wherein the protection layer comprises stacked layers of at least an oxide layer and at least a nitride layer.

14. The semiconductor sensor device according to claim 1, wherein the pixels have a size of about 60 μ

m×

60 μ

m.

15. The semiconductor sensor device according to claim 1, wherein the phase grating structure is a layer having cavities or channels, the cavities or the channels being the periodically arranged patterns.

16. The semiconductor sensor device according to claim 1, wherein the phase grating structure has an adjustable height for adjusting the color appearance of the semiconductor sensor device.