Semiconductor device and method for manufacturing the same

• US 9,728,631 B2
• Filed: 06/05/2014
• Issued: 08/08/2017
• Est. Priority Date: 01/28/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsurume, Takuya
• Primary Examiner(s): Anya, Igwe U
• Application Number:
  US14/296,854
• Publication Number:
  US 20140284668A1
• Time in Patent Office: 1,160 Days
• Field of Search: 257288
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/13 combined with thin-film or thick-film passive components
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01025 Manganese [Mn]
• CPC Class Codes: H01L 2924/01067 Holmium [Ho]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12044 : OLED

Abstract

An object of the present invention is to provide a semiconductor device having a conductive film, which sufficiently serves as an antenna, and a method for manufacturing thereof. The semiconductor device has an element formation layer including a transistor, which is provided over a substrate, an insulating film provided on the element formation layer, and a conductive film serving as an antenna, which is provided on the insulating film. The insulating film has a groove. The conductive film is provided along the surface of the insulating film and the groove. The groove of the insulating film may be provided to pass through the insulating film. Alternatively, a concave portion may be provided in the insulating film so as not to pass through the insulating film. A structure of the groove is not particularly limited, and for example, the groove can be provided to have a tapered shape, etc.

Claims

1. A semiconductor device comprising:

a first film;

an element formation layer including a transistor over the first film;

an antenna formation layer including a conductive film over the element formation layer; and

a second film over the antenna formation layer,

wherein the first film and the second film are attached with each other,

wherein the element formation layer and the antenna formation layer are sealed with the first film and the second film, and

wherein at least one of the first film and the second film is an antistatic film comprising an antistatic material.

2. A semiconductor device according to claim 1, wherein the conductive film and the transistor are electrically connected with each other through a conductive microparticle.

3. A semiconductor device according to claim 1, wherein the conductive film has a concave portion or a convex portion.

4. A semiconductor device according to claim 1, wherein the first film has flexibility.

5. A semiconductor device according to claim 1, wherein the semiconductor device comprises an IC chip.

6. A semiconductor device comprising:

a first film;

an element formation layer including a transistor over the first film;

an antenna formation layer including a conductive film over the element formation layer; and

a second film over the antenna formation layer,

wherein the first film and the second film are attached with each other through a resin having an adhesion property,

wherein the element formation layer and the antenna formation layer are sealed with the first film and the second film, and

wherein at least one of the first film and the second film is an antistatic film comprising an antistatic material.

7. A semiconductor device according to claim 6, wherein the conductive film and the transistor are electrically connected with each other through a conductive microparticle.

8. A semiconductor device according to claim 6, wherein the conductive film has a concave portion or a convex portion.

9. A semiconductor device according to claim 6, wherein the first film has flexibility.

10. A semiconductor device according to claim 6, wherein the semiconductor device comprises an IC chip.

11. A semiconductor device comprising:

a first film;

an element formation layer including a transistor over the first film;

an antenna formation layer including a conductive film over the element formation layer; and

a second film over the antenna formation layer,

wherein the conductive film has a coiled shape,

wherein the first film and the second film are attached with each other,

wherein the element formation layer and the antenna formation layer are sealed with the first film and the second film, and

wherein at least one of the first film and the second film is an antistatic film comprising an antistatic material.

12. A semiconductor device according to claim 11, wherein the conductive film and the transistor are electrically connected with each other through a conductive microparticle.

13. A semiconductor device according to claim 11, wherein the conductive film has a concave portion or a convex portion.

14. A semiconductor device according to claim 11, wherein the first film has flexibility.

15. A semiconductor device according to claim 11, wherein the semiconductor device comprises an IC chip.

16. A semiconductor device comprising:

a first film;

an element formation layer including a transistor over the first film;

an antenna formation layer including a conductive film over the element formation layer; and

a second film over the antenna formation layer,

wherein the conductive film has a coiled shape,

wherein the first film and the second film are attached with each other through a resin having an adhesion property,

wherein the element formation layer and the antenna formation layer are sealed with the first film and the second film, and

wherein at least one of the first film and the second film is an antistatic film comprising an antistatic material.

17. A semiconductor device according to claim 16, wherein the conductive film and the transistor are electrically connected with each other through a conductive microparticle.

18. A semiconductor device according to claim 16, wherein the conductive film has a concave portion or a convex portion.

19. A semiconductor device according to claim 16, wherein the first film has flexibility.

20. A semiconductor device according to claim 16, wherein the semiconductor device comprises an IC chip.

21. A semiconductor device comprising:

a first film;

a transistor over the first film;

a conductive film over the transistor; and

a second film over the conductive film,

wherein the first film and the second film are attached with each other,

wherein the transistor and the conductive film are sealed with the first film and the second film, and

wherein each of the first film and the second film is an antistatic film comprising an antistatic material.

22. A semiconductor device according to claim 21, wherein the conductive film and the transistor are electrically connected with each other through a conductive microparticle.

23. A semiconductor device according to claim 21, wherein the conductive film has a concave portion or a convex portion.

24. A semiconductor device according to claim 21, wherein the first film has flexibility.

25. A semiconductor device according to claim 21, wherein the semiconductor device comprises an IC chip.