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Semiconductor device and method for manufacturing the same

  • US 9,728,651 B2
  • Filed: 06/09/2016
  • Issued: 08/08/2017
  • Est. Priority Date: 12/18/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor layer over an insulating surface;

    a gate insulating layer over the oxide semiconductor layer;

    a gate electrode layer over the gate insulating layer; and

    a source electrode layer and a drain electrode layer over the oxide semiconductor layer,wherein the oxide semiconductor layer comprises a channel formation region, a first region, and a second region,wherein the first region is electrically connected to the source electrode layer,wherein the second region is electrically connected to the drain electrode layer,wherein each of the first region and the second region contains more of one or more elements selected from titanium, tungsten, molybdenum, cobalt, and silicon than the channel formation region, andwherein the oxide semiconductor layer contains indium, gallium, and zinc.

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