Resistive memory device
First Claim
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1. A method for forming a device comprising:
- providing a substrate prepared with a lower cell dielectric layer with gate conductors disposed in a first direction, wherein the gate conductors are elongated gate conductors formed in the lower cell dielectric layer and separated by the lower cell dielectric layer;
forming a body unit conductor over a top surface of the lower cell dielectric layer and gate conductors, wherein the body unit conductor is disposed in and along a second direction orthogonal to the first direction and traverses the gate conductors;
forming memory element conductors on the body unit conductor and lower cell dielectric layer, wherein the memory element conductors are elongated memory element conductors disposed in and along the same first direction over the gate conductors; and
forming an upper cell dielectric layer on the substrate to cover the lower cell dielectric layer, body unit conductor and memory element conductors, wherein the upper cell dielectric layer isolates the memory element conductors from each other.
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Abstract
A non-volatile memory device and a manufacturing method thereof are provided. The memory device includes a substrate, a lower cell dielectric layer with gate conductors and a body unit conductor disposed on the lower cell dielectric layer and gates. Memory element conductors are disposed on the body unit and lower cell dielectric layer. An upper cell dielectric layer may be on the substrate and over the lower cell dielectric layer, body unit conductor and memory element conductors. The upper cell dielectric layer isolates the memory element conductors.
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Citations
22 Claims
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1. A method for forming a device comprising:
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providing a substrate prepared with a lower cell dielectric layer with gate conductors disposed in a first direction, wherein the gate conductors are elongated gate conductors formed in the lower cell dielectric layer and separated by the lower cell dielectric layer; forming a body unit conductor over a top surface of the lower cell dielectric layer and gate conductors, wherein the body unit conductor is disposed in and along a second direction orthogonal to the first direction and traverses the gate conductors; forming memory element conductors on the body unit conductor and lower cell dielectric layer, wherein the memory element conductors are elongated memory element conductors disposed in and along the same first direction over the gate conductors; and forming an upper cell dielectric layer on the substrate to cover the lower cell dielectric layer, body unit conductor and memory element conductors, wherein the upper cell dielectric layer isolates the memory element conductors from each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for forming a device comprising:
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providing a substrate prepared with a lower cell dielectric layer with first type conductors disposed in and extends along a first direction, wherein the first type conductors are elongated first type conductors separated by the lower cell dielectric layer; forming a body unit conductor over a top surface of the lower cell dielectric layer and first type conductors, wherein the body unit conductor is disposed in and extends along a second direction orthogonal to the first direction and traverses the first type conductors; forming second type conductors on the body unit conductor and the lower cell dielectric layer, wherein the second type conductors are elongated second type conductors disposed in and extend along a direction which is parallel to the first direction over the first type conductors, wherein the first and second type conductors directly contact the body unit conductor; and forming an upper cell dielectric layer on the substrate to cover the lower cell dielectric layer, body unit conductor and second type conductors, wherein the upper cell dielectric layer isolates the second type conductors from each other. - View Dependent Claims (19, 20, 21)
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22. A method for forming a device comprising:
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providing a substrate prepared with a lower cell dielectric layer with first type conductors disposed in and extends along a first direction, wherein the first type conductors are elongated first type conductors separated by the lower cell dielectric layer, wherein the first type conductors comprise gate conductors; forming a body unit conductor over a top surface of the lower cell dielectric layer and first type conductors, wherein the body unit conductor is disposed in and extends along a second direction orthogonal to the first direction and traverses the first type conductors; forming second type conductors on the body unit conductor and the lower cell dielectric layer, wherein the second type conductors are elongated second type conductors disposed in and extend along a direction which is parallel to the first direction over the first type conductors, wherein the second type conductors comprise memory element conductors; and forming an upper cell dielectric layer on the substrate to cover the lower cell dielectric layer, body unit conductor and second type conductors, wherein the upper cell dielectric layer isolates the second type conductors from each other.
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Specification