Pressure sensor, and sensor unit provided with same

• US 9,733,142 B2
• Filed: 10/15/2013
• Issued: 08/15/2017
• Est. Priority Date: 10/17/2012
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited), Kabushiki Kaisha Saginomiya Seisakusho
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited), Kabushiki Kaisha Saginomiya Seisakusho
• Inventors: Ishikawa, Takuro, Kanai, Yuji, Matsunami, Kazuhiro
• Primary Examiner(s): CAPUTO, LISA M
• Assistant Examiner(s): Tran, Tran M
• Application Number:
  US14/436,280
• Publication Number:
  US 20150285703A1
• Time in Patent Office: 1,400 Days
• CPC Class Codes: G01L 19/0645 using isolation membranes, specially adapted for protection
• CPC Class Codes: G01L 19/069 Protection against electromagnetic or electrostatic interferences
• CPC Class Codes: G01L 19/142 Multiple part housings
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

When a main body of a sensor chip (1) is in a grounded state, a shield layer (71) constituting a shield electrode formed on a circuit layer (72) is grounded through a resistor (46).

Claims

1. A pressure sensor comprising:

a sensor chip comprising;

a main body comprising;

a movable portion provided with a plurality of pressure detection elements, the movable portion being adapted to displace in response to a pressure acting thereon; and

a fixed portion that is continuous with the movable portion;

a circuit formed in a first layer laminated on the main body, the circuit being connected to the pressure detection elements through a conductive element; and

a shield layer formed in a second layer laminated on the first layer, the shield layer having an opening extending therethrough directly above the movable portion, the shield layer formed continuously around the opening;

a capacitor formed between the shield layer and an output voltage line; and

a resistor connected between the shield layer and a ground line, the resistor having a resistance value greater than or equal to 10Ω and

less than or equal to 1 MΩ

.

2. The pressure sensor according to claim 1, wherein a shield layer made of aluminum and connected to the resistor is formed in the second layer and above the circuit formed in the first layer.

3. The pressure sensor according to claim 2, wherein a shield layer made of aluminum and connected to the resistor is formed in the second layer at a position immediately above a plurality of semiconductor elements in the circuit to be formed in the first layer.

4. The pressure sensor according to claim 1, wherein the shield layer in the second layer is made of polysilicon, and covers a predetermined region located immediately above the plurality of pressure detection elements.

5. A sensor unit comprising:

the pressure sensor according to claim 1;

a housing configured to accommodate the pressure sensor through use of a sealing material;

a diaphragm configured to isolate an inner peripheral portion of the housing from a pressure chamber of which a pressure is to be detected;

a pressure transmission medium filled between the diaphragm and the sensor chip of the pressure sensor; and

a terminal group to be electrically connected to the circuit in the sensor chip of the pressure sensor.

6. A sensor unit comprising:

the pressure sensor according to claim 1;

a housing configured to accommodate the pressure sensor through use of a sealing material;

a diaphragm configured to isolate an inner peripheral portion of the housing from a pressure chamber of which a pressure is to be detected;

a pressure transmission medium filled between the diaphragm and the sensor chip of the pressure sensor;

a terminal group to be electrically connected to the circuit in the sensor chip of the pressure sensor, and

wherein the shield layer is made of aluminum and is connected to the resistor, wherein the shield layer is formed in the second layer and above the circuit formed in the first layer.

7. A sensor unit comprising:

the pressure sensor according to claim 1;

a housing configured to accommodate the pressure sensor through use of a sealing material;

a diaphragm configured to isolate an inner peripheral portion of the housing from a pressure chamber of which a pressure is to be detected;

a pressure transmission medium filled between the diaphragm and the sensor chip of the pressure sensor;

a terminal group to be electrically connected to the circuit in the sensor chip of the pressure sensor, and

wherein the shield layer in the second layer is made of polysilicon, and covers a predetermined region located immediately above the plurality of pressure detection elements.

8. A pressure sensor comprising:

a sensor chip comprising;

a main body comprising;

a movable portion provided with a plurality of pressure detection elements, the movable portion being adapted to displace in response to a pressure acting thereon; and

a fixed portion that is continuous with the movable portion;

a circuit formed in a first layer laminated on the main body, the circuit being connected to the pressure detection elements through a conductive element;

a shield layer formed in a second layer laminated on the first layer, the shield layer having an opening extending therethrough directly above the movable portion, the shield layer formed continuously around the opening;

a capacitor formed between the shield layer and a ground line; and

a resistor connected between the shield layer and an input voltage line, the resistor having a resistance value greater than or equal to 10Ω and

less than or equal to 1 MΩ

.

9. A sensor unit comprising:

the pressure sensor according to claim 8;

a housing configured to accommodate the pressure sensor through use of a sealing material;

a diaphragm configured to isolate an inner peripheral portion of the housing from a pressure chamber of which a pressure is to be detected;

a pressure transmission medium filled between the diaphragm and the sensor chip of the pressure sensor; and

a terminal group to be electrically connected to the circuit in the sensor chip of the pressure sensor.

10. The pressure sensor according to claim 8, wherein a shield layer made of aluminum and connected to the resistor is formed in the second layer and above the circuit formed in the first layer.

11. The pressure sensor according to claim 10, wherein a shield layer made of aluminum and connected to the resistor is formed in the second layer at a position immediately above a plurality of semiconductor elements in the circuit to be formed in the first layer.

12. The pressure sensor according to claim 8, wherein the shield layer in the second layer is made of polysilicon, and covers a predetermined region located immediately above the plurality of pressure detection elements.

13. A sensor unit comprising:

the pressure sensor according to claim 8;

a housing configured to accommodate the pressure sensor through use of a sealing material;

a diaphragm configured to isolate an inner peripheral portion of the housing from a pressure chamber of which a pressure is to be detected;

a pressure transmission medium filled between the diaphragm and the sensor chip of the pressure sensor;

a terminal group to be electrically connected to the circuit in the sensor chip of the pressure sensor, and

wherein the shield layer is made of aluminum and is connected to the resistor, wherein the shield layer is formed in the second layer and above the circuit formed in the first layer.

14. A sensor unit comprising:

the pressure sensor according to claim 8;

a housing configured to accommodate the pressure sensor through use of a sealing material;

a diaphragm configured to isolate an inner peripheral portion of the housing from a pressure chamber of which a pressure is to be detected;

a pressure transmission medium filled between the diaphragm and the sensor chip of the pressure sensor;

a terminal group to be electrically connected to the circuit in the sensor chip of the pressure sensor, and

wherein the shield layer in the second layer is made of polysilicon, and covers a predetermined region located immediately above the plurality of pressure detection elements.

15. A pressure sensor comprising:

a sensor chip comprising;

a main body comprising;

a fixed portion formed on a glass layer;

a movable portion integrally formed with the fixed portion, the movable portion being displaceable in response to pressure acting thereon; and

a plurality of pressure detection elements positioned on the main body;

a circuit layer laminated on the main body, the circuit layer having a circuit formed therein that is electrically connected to the pressure detection elements through a conductive element;

a shield layer laminated on the circuit layer, the shield layer having an opening extending therethrough directly above the movable portion, wherein the shield layer is formed continuously around the opening; and

a capacitor formed between the shield layer and one of;

an output voltage line and a ground line; and

a resistor connected between the shield layer and the other one of the output voltage line and the ground line, the resistor having a resistance value greater than or equal to 10Ω and

less than or equal to 1 MΩ

.