Memory repair using external tags
First Claim
1. A memory integrated circuit, comprising:
- a memory array having a plurality of columns and a plurality of rows, the memory array comprising at least one repair column comprising at least one repair element, each of the at least one repair elements comprising at least one repair cell;
an external command/address interface to receive a command, a row address, and a column address from a source external to the memory integrated circuit, the row address to select a row of the plurality of rows to output a row of data, the column address to select a subset of the row of data; and
,an external repair address interface to receive a repair enable indicator and a repair address from the source external to the memory integrated circuit, the repair address corresponding to a column of a subset of the plurality of rows, the memory integrated circuit to determine, based on the command and the repair enable indicator, whether data from the repair column is to be output by the memory.
1 Assignment
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Accused Products
Abstract
A memory device (100) includes an extra column (114) of repair memory tiles. These repair memory tiles are accessed at the same time, and in the same manner as the main array of memory tiles. The output of the repair column is substituted for the output of a column of the main array (112). The main array column that is substituted is determined by tags (121) stored externally to the memory device. The external tags are queried with a partial address of the access. If the address of the access corresponds to an address in the external tags, the tag information is supplied to the memory device. The tag information determines which column in the main array is replaced by the output of the repair column. Since each column of the main array supplies one bit during the access, the repair column enables cell-by-cell replacement of main array cells.
95 Citations
20 Claims
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1. A memory integrated circuit, comprising:
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a memory array having a plurality of columns and a plurality of rows, the memory array comprising at least one repair column comprising at least one repair element, each of the at least one repair elements comprising at least one repair cell; an external command/address interface to receive a command, a row address, and a column address from a source external to the memory integrated circuit, the row address to select a row of the plurality of rows to output a row of data, the column address to select a subset of the row of data; and
,an external repair address interface to receive a repair enable indicator and a repair address from the source external to the memory integrated circuit, the repair address corresponding to a column of a subset of the plurality of rows, the memory integrated circuit to determine, based on the command and the repair enable indicator, whether data from the repair column is to be output by the memory. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A memory module, comprising:
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a plurality of memory integrated circuits comprising at least a first memory integrated circuit and a second memory integrated circuit, the first memory integrated circuit having a first repair memory subarray, the second memory integrated circuit having a second repair memory subarray; a first address bus, external to the plurality of memory integrated circuits, to distribute row and column access addresses to the plurality of memory integrated circuits; and
,a second address bus, external to the plurality of memory integrated circuits, to distribute repair addresses to the plurality of memory integrated circuits, the second address bus to also cause the first memory integrated circuit to output data stored in the first repair memory subarray and to cause the second memory integrated circuit not to output data stored in the second memory subarray. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of repairing a first memory integrated circuit of a plurality of memory integrated circuits that reside on a common substrate, comprising:
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storing a repair address in an integrated circuit, the repair address corresponding to a column of a subset of rows of the first memory integrated circuit; receiving, by the integrated circuit, an access address that matches the repair address; and
,in response to receiving the access address that matches the repair address, outputting, by the integrated circuit, an external repair indicator to the plurality of memory integrated circuits, the external repair indicator to indicate the first memory integrated circuit is to output data stored in a respective internal repair sub-array, the external repair indicator to also indicate that at least one of the plurality of memory integrated circuits are not to output data stored in a corresponding respective internal repair sub-array. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification