Method for etching organic film

• US 9,735,027 B2
• Filed: 04/14/2016
• Issued: 08/15/2017
• Est. Priority Date: 04/20/2015
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Lee, Chungjong, Katsunuma, Takayuki, Honda, Masanobu
• Primary Examiner(s): OLSEN, ALLAN W
• Application Number:
  US15/098,434
• Publication Number:
  US 20160307775A1
• Time in Patent Office: 488 Days
• Field of Search: None
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks

Abstract

Disclosed is a method for etching an organic film. Plasma of a processing gas containing hydrogen gas and nitrogen gas is generated within a processing container of a plasma processing apparatus that accommodates a workpiece. A partial region of the organic film that is exposed from a hard mask is changed into a denatured region by the generation of the plasma of the processing gas. Subsequently, plasma of a rare gas is generated within the processing container. The denatured region is removed by the plasma of the rare gas, and a substance released from the denatured region is deposited on the surface of the hard mask. In this method, the generation of the plasma of the processing gas and the generation of the plasma of the rare gas are repeated alternately.

Claims

1. A method for etching an organic film of an object to be processed (“

workpiece”

) which includes a hard mask on the organic film, the method comprising;

generating plasma of a processing gas containing a hydrogen gas and a nitrogen gas within a processing container of a plasma processing apparatus that accommodates the workpiece, wherein a partial region of the organic film that is exposed from the hard mask is changed into a denatured region;

generating plasma of a rare gas within the processing container, wherein the denatured region is removed and a substance released from the denatured region is deposited on a surface of the hard mask; and

alternately repeating the generating the plasma of the processing gas and the generating the plasma of the rare gas.

2. The method of claim 1, wherein the workpiece is placed on a placement table that includes a lower electrode, within the processing container, and in the generating the plasma of the rare gas, a power of a high frequency bias, which is supplied to the lower electrode, per unit area is set to a power of 0.028 W/cm² or less.

3. The method of claim 2, wherein, in the generating the plasma of the processing gas, no high frequency bias is supplied to a lower electrode.

4. The method of claim 1, wherein a flow rate ratio, which is represented by a flow rate of the hydrogen gas in the processing gas to a flow rate of the nitrogen gas in the processing gas, is set to be within a range of 1:

3 to 9;

1.

5. The method of claim 1, further comprising generating plasma of a hydrocarbon gas within the processing container.