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Wafer level embedded heat spreader

  • US 9,735,087 B2
  • Filed: 09/20/2012
  • Issued: 08/15/2017
  • Est. Priority Date: 09/20/2012
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a die disposed within a substrate at a first side of the substrate, and having a plurality of contact pads disposed on a first side of the die and exposed at the first side of the substrate, the contact pads being level with the first side of the substrate;

    a heat spreader disposed within the substrate at a second side of the substrate opposite the first side of the substrate, the heat spreader over and in thermal contact with the die;

    a first redistribution layer (RDL) disposed on the first side of the substrate, the first RDL comprising one or more dielectric layers, the first RDL having a plurality of conductive lines disposed in the one or more dielectric layers, a first surface of a first conductive line of the plurality of conductive lines exposed at a first side of the RDL and substantially planar with a surface of a first dielectric layer of the one or more dielectric layers, the first surface of the first conductive line contacting one of the plurality of contact pads on the die, wherein the substrate and the heat spreader are formed of different materials;

    a second RDL disposed on the second side of the substrate, the second RDL having a plurality of conductive lines disposed in one or more dielectric layers, wherein the heat spreader is interposed between the second RDL and the die;

    an opening in the second RDL, wherein the opening exposes a portion of a surface of the heat spreader, and an uppermost surface of the heat spreader is below an uppermost surface of the second RDL; and

    vias electrically interposed between the first RDL and the second RDL.

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