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Dual metal-insulator-semiconductor contact structure and formulation method

  • US 9,735,111 B2
  • Filed: 09/23/2015
  • Issued: 08/15/2017
  • Est. Priority Date: 09/23/2015
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, the method comprising:

  • forming a first source/drain trench over a first source/drain region in a first transistor and a second source/drain trench over a second source/drain region in a second transistor;

    forming a first silicon dioxide layer in the first source/drain trench and a second silicon dioxide layer in the second source/drain trench;

    forming a first source/drain contact over the first source/drain region, the first source/drain contact comprising a first tri-layer contact disposed between the first silicon dioxide layer and a first conductive material; and

    forming a second source/drain contact over the second source/drain region, the second source/drain contact comprising a second tri-layer contact disposed between the second silicon dioxide layer and a second conductive material;

    wherein the first tri-layer contact comprises a first metal oxide layer in contact with the first silicon dioxide layer, and the second tri-layer contact comprises a second metal oxide layer in contact with the second silicon dioxide layer.

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