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Active area designs for silicon carbide super-junction power devices

  • US 9,735,237 B2
  • Filed: 06/26/2015
  • Issued: 08/15/2017
  • Est. Priority Date: 06/26/2015
  • Status: Active Grant
First Claim
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1. A silicon carbide (SiC) super-junction (SJ) device, comprising:

  • an active area including one or more charge balance (CB) layers, wherein each CB layer comprises;

    a semiconductor layer having a first conductivity-type; and

    a plurality of floating regions having a second conductivity-type disposed in a surface of the semiconductor layer, wherein the plurality of floating regions and the semiconductor layer are both configured to substantially deplete to provide substantially equal amounts of charge from ionized dopants when a reverse bias is applied to the SiC-SJ device, wherein a doping concentration of the plurality of floating regions is between 2×

    1016 cm

    3
    and 1×

    1018 cm

    3
    , and wherein a spacing between the plurality of floating regions of a particular CB layer of the one or more CB layers is greater than or equal to 10% of a thickness of the particular CB layer and is less than or equal to the thickness of the particular CB layer.

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