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Semiconductor device including a stacked wire structure

  • US 9,735,274 B2
  • Filed: 11/20/2015
  • Issued: 08/15/2017
  • Est. Priority Date: 11/20/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device structure, comprising:

  • a substrate;

    a stacked wire structure formed over the substrate, wherein the stacked wire structure comprises a second semiconductor wire over a first semiconductor wire, and the first semiconductor wire and the second semiconductor wire are made of different materials;

    a gate structure formed over a middle portion of the stacked wire structure; and

    a source/drain (S/D) structure formed at two opposite sides of the stacked wire structure, wherein the S/D structure comprises a top surface, a sidewall surface, and a rounded corner between the top surface and the sidewall surface.

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