Semiconductor device including a stacked wire structure
First Claim
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1. A semiconductor device structure, comprising:
- a substrate;
a stacked wire structure formed over the substrate, wherein the stacked wire structure comprises a second semiconductor wire over a first semiconductor wire, and the first semiconductor wire and the second semiconductor wire are made of different materials;
a gate structure formed over a middle portion of the stacked wire structure; and
a source/drain (S/D) structure formed at two opposite sides of the stacked wire structure, wherein the S/D structure comprises a top surface, a sidewall surface, and a rounded corner between the top surface and the sidewall surface.
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a stacked wire structure formed over the substrate. The semiconductor device structure also includes a gate structure formed over a middle portion of the stacked wire structure and a source/drain (S/D) structure formed at two opposite sides of the stacked wire structure. The S/D structure includes a top surface, a sidewall surface, and a rounded corner between the top surface and the sidewall surface.
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Citations
18 Claims
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1. A semiconductor device structure, comprising:
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a substrate; a stacked wire structure formed over the substrate, wherein the stacked wire structure comprises a second semiconductor wire over a first semiconductor wire, and the first semiconductor wire and the second semiconductor wire are made of different materials; a gate structure formed over a middle portion of the stacked wire structure; and a source/drain (S/D) structure formed at two opposite sides of the stacked wire structure, wherein the S/D structure comprises a top surface, a sidewall surface, and a rounded corner between the top surface and the sidewall surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device structure, comprising:
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a substrate with (110) surface orientation or (111) surface orientation; a fin structure extending above the substrate; a first semiconductor wire formed over the fin structure; a second semiconductor wire formed over the first semiconductor wire, wherein the first semiconductor wire and the second semiconductor wire are made of different materials; a gate structure formed over middle portions of the first semiconductor wire and the second semiconductor wire; and a source/drain (S/D) structure formed at two opposite sides of the first semiconductor wire and the second semiconductor wire, wherein the S/D structure comprises a first portion over sidewalls of the first semiconductor wire and a second portion over sidewalls of the second semiconductor wire, and the first portion is thicker than, or thinner than, the second portion. - View Dependent Claims (13, 14, 15)
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16. A semiconductor device structure, comprising:
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a substrate with (110) surface orientation or (111) surface orientation; a fin structure extending above the substrate, and having a stacked wire structure with a bottom surface; an isolation structure formed over the substrate; and a source/drain (S/D) structure formed at two opposite sides of the stacked wire structure, wherein the S/D structure comprises a top flat surface, a sidewall surface, and a rounded corner between the top flat surface and the sidewall surface; wherein the stacked wire structure comprises a second semiconductor wire over a first semiconductor wire, the S/D structure comprises a first portion over sidewalls of the first semiconductor wire and a second portion over sidewalls of the second semiconductor wire, and the first portion and the second portion of the S/D structure have a periodical wave-like profile. - View Dependent Claims (17, 18)
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Specification