Semiconductor device comprising oxide semiconductor
First Claim
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1. A semiconductor device comprising:
- an oxide semiconductor layer;
a first conductive layer electrically connected to the oxide semiconductor layer;
a second conductive layer electrically connected to the oxide semiconductor layer;
an insulating layer over the first conductive layer and the second conductive layer; and
a third conductive layer over the insulating layer,wherein the third conductive layer overlaps the oxide semiconductor layer, the first conductive layer and the second conductive layer,wherein the oxide semiconductor layer includes indium, zinc and gallium,wherein the third conductive layer includes a conductive metal oxide,wherein the oxide semiconductor layer includes a first region and a second region below the first region,wherein the second region has a lower crystallinity than the first region, andwherein the first conductive layer and the second conductive layer are in direct contact with the second region.
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Abstract
A semiconductor device includes an oxide semiconductor layer including a crystalline region over an insulating surface, a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, and a gate electrode layer over the gate insulating layer in a region overlapping with the crystalline region. The crystalline region includes a crystal whose c-axis is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer.
159 Citations
22 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer; a first conductive layer electrically connected to the oxide semiconductor layer; a second conductive layer electrically connected to the oxide semiconductor layer; an insulating layer over the first conductive layer and the second conductive layer; and a third conductive layer over the insulating layer, wherein the third conductive layer overlaps the oxide semiconductor layer, the first conductive layer and the second conductive layer, wherein the oxide semiconductor layer includes indium, zinc and gallium, wherein the third conductive layer includes a conductive metal oxide, wherein the oxide semiconductor layer includes a first region and a second region below the first region, wherein the second region has a lower crystallinity than the first region, and wherein the first conductive layer and the second conductive layer are in direct contact with the second region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a fourth conductive layer; a first insulating layer over the fourth conductive layer; an oxide semiconductor layer over the first insulating layer; a first conductive layer electrically connected to the oxide semiconductor layer; a second conductive layer electrically connected to the oxide semiconductor layer; a second insulating layer over the first conductive layer and the second conductive layer; and a third conductive layer over the second insulating layer, wherein the third conductive layer overlaps the oxide semiconductor layer, the first conductive layer and the second conductive layer, wherein the oxide semiconductor layer includes indium, zinc and gallium, wherein the third conductive layer includes a conductive metal oxide, wherein the oxide semiconductor layer includes a first region and a second region below the first region, wherein the second region has a lower crystallinity than the first region, and wherein the first conductive layer and the second conductive layer are in direct contact with the second region. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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an oxide semiconductor layer; a first conductive layer electrically connected to the oxide semiconductor layer; a second conductive layer electrically connected to the oxide semiconductor layer; an insulating layer over the first conductive layer and the second conductive layer; and a third conductive layer over the insulating layer, wherein the third conductive layer overlaps the oxide semiconductor layer, the first conductive layer and the second conductive layer, wherein the oxide semiconductor layer includes indium, zinc and gallium, wherein the third conductive layer includes a conductive metal oxide, wherein the oxide semiconductor layer includes a first region and a second region below the first region, wherein the first region includes a crystal whose c-axis is aligned, and wherein the second region has a lower crystallinity than the first region. - View Dependent Claims (14, 15, 16, 17)
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18. A semiconductor device comprising:
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a fourth conductive layer; a first insulating layer over the fourth conductive layer; an oxide semiconductor layer over the first insulating layer; a first conductive layer electrically connected to the oxide semiconductor layer; a second conductive layer electrically connected to the oxide semiconductor layer; a second insulating layer over the first conductive layer and the second conductive layer; and a third conductive layer over the second insulating layer, wherein the third conductive layer overlaps the oxide semiconductor layer, the first conductive layer and the second conductive layer, wherein the oxide semiconductor layer includes indium, zinc and gallium, wherein the third conductive layer includes a conductive metal oxide, wherein the oxide semiconductor layer includes a first region and a second region below the first region, wherein the first region includes a crystal whose c-axis is aligned, and wherein the second region has a lower crystallinity than the first region. - View Dependent Claims (19, 20, 21, 22)
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Specification