Semiconductor device and Zener diode
First Claim
1. A semiconductor device having a Zener diode, the semiconductor device comprising:
- a substrate;
a well region of a first-conductivity-type, disposed in the substrate;
a first impurity region of the first-conductivity-type disposed in the well region;
a second impurity region of a second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type;
a third impurity region disposed in the well region, a portion of the first impurity region overlapping a first portion of the third impurity region, a portion of the second impurity region overlapping a second portion of the third impurity region, and a third portion of the third impurity region being disposed between the first impurity region and the second impurity region; and
a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer enclosing the well region from around and below, respectively.
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Accused Products
Abstract
A semiconductor device includes a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of a first-conductivity-type disposed in the well region; a second impurity region of the second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type; a third impurity region disposed in the well region, a portion of the first impurity region overlapping a first portion of the third impurity region, a portion of the second impurity region overlapping a second portion of the third impurity region, and a third portion of the third impurity region being disposed between the first impurity region and the second impurity region; and a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer enclosing the well region from around and below, respectively.
17 Citations
17 Claims
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1. A semiconductor device having a Zener diode, the semiconductor device comprising:
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a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of the first-conductivity-type disposed in the well region; a second impurity region of a second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type; a third impurity region disposed in the well region, a portion of the first impurity region overlapping a first portion of the third impurity region, a portion of the second impurity region overlapping a second portion of the third impurity region, and a third portion of the third impurity region being disposed between the first impurity region and the second impurity region; and a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer enclosing the well region from around and below, respectively. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device having a Zener diode, the semiconductor device comprising:
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a substrate; a well region of a first-conductivity-type, disposed in the substrate; a first impurity region of the first-conductivity-type disposed in the well region; a second impurity region of a second-conductivity-type disposed in the well region, the second-conductivity-type being opposite to the first-conductivity-type; a third impurity region disposed in the well region, wherein a portion of the third impurity region is disposed between the first impurity region and the second impurity region; a fourth impurity region and a barrier layer disposed in the substrate, the fourth impurity region and the barrier layer respectively enclosing the well region from around and below to form a charge barrier; a fifth impurity region disposed in the substrate and surrounding the fourth impurity region; a first isolation region between an outer boundary of the third impurity region and an inner boundary of the fourth impurity region; and a second isolation region between an outer boundary of the fourth impurity region and an inner boundary of the fifth impurity region. - View Dependent Claims (15, 16, 17)
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Specification