Light emitting device and manufacturing method for same
First Claim
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1. A light emitting device comprising:
- a support substrate;
a reflective layer on the support substrate;
a first layer including ohmic contact regions and a plurality of insulating regions on the reflective layer;
a light emitting semiconductor layer disposed on the first layer and including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer;
an electrode on a top surface of the first conductive semiconductor layer;
a light extracting structure on the top surface of the first conductive semiconductor layer,a roughness disposed over the plurality of the insulating regions; and
a passivation layer disposed on top and side surfaces of the light emitting semiconductor layer, the passivation layer being in contact with the first layer,wherein the light extracting structure is disposed adjacent to the electrode, andwherein the insulating regions extend radially from a center of the ohmic contact regions.
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Abstract
Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region.
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Citations
13 Claims
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1. A light emitting device comprising:
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a support substrate; a reflective layer on the support substrate; a first layer including ohmic contact regions and a plurality of insulating regions on the reflective layer; a light emitting semiconductor layer disposed on the first layer and including a second conductive semiconductor layer, an active layer on the second conductive semiconductor layer, and a first conductive semiconductor layer on the active layer; an electrode on a top surface of the first conductive semiconductor layer; a light extracting structure on the top surface of the first conductive semiconductor layer, a roughness disposed over the plurality of the insulating regions; and a passivation layer disposed on top and side surfaces of the light emitting semiconductor layer, the passivation layer being in contact with the first layer, wherein the light extracting structure is disposed adjacent to the electrode, and wherein the insulating regions extend radially from a center of the ohmic contact regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 12)
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11. A light emitting device comprising:
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a reflective layer; a first layer including ohmic contact regions and a plurality of insulation regions on the reflective layer; a light emitting semiconductor layer on the reflective layer and including a plurality of light emitting structures disposed separate from each other; an electrode on the light emitting semiconductor layer to overlap a portion of each of the plurality of light emitting structures; a light extracting structure on the light emitting semiconductor layer, and a roughness disposed over a plurality of insulating regions, wherein a width of a top surface of the electrode is smaller than a width of a flat surface of the light emitting semiconductor layer between the light extracting structures, and wherein the insulating regions extend radially from a center of the ohmic contact regions. - View Dependent Claims (13)
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Specification