Method and system for removing boron from magnetic junctions usable in spin transfer torque memory applications

• US 9,735,350 B2
• Filed: 12/28/2015
• Issued: 08/15/2017
• Est. Priority Date: 01/05/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Chepulskyy, Roman, Beach, Robert, Erickson, Dustin William, Nikitin, Vladimir
• Primary Examiner(s): Lee, Kyoung
• Assistant Examiner(s): SYLVIA, CHRISTINA A
• Application Number:
  US14/981,107
• Publication Number:
  US 20160197270A1
• Time in Patent Office: 596 Days
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A method provides a magnetic junction having a top and sides. A first magnetic layer, a nonmagnetic spacer layer and a second magnetic layer are deposited. The nonmagnetic spacer layer is between the first and second magnetic layers. A free layer is one of the magnetic layers. A reference layer is the other of the magnetic layers. The second magnetic layer includes an amorphous magnetic layer having nonmagnetic constituent(s) that are glass-forming. An anneal is performed in a gas having an affinity for the nonmagnetic constituent(s). The gas includes at least one of first and second gases. The first gas forms a gaseous compound with the nonmagnetic constituent(s) The second gas forms a solid compound with the nonmagnetic constituent(s). The second gas is usable if the anneal is performed after the magnetic junction has been defined. The solid compound is at least on the sides of the magnetic junction.

Claims

1. A method for providing a magnetic junction residing on a substrate and usable in a magnetic device, the magnetic junction including a top and a plurality of sides, the method comprising:

depositing a first magnetic layer;

depositing a nonmagnetic spacer layer;

depositing a second magnetic layer, the nonmagnetic spacer layer being between the first magnetic layer and the second magnetic layer, a free layer being one of the first magnetic layer and the second magnetic layer, a reference layer being an other of the first magnetic layer and the second magnetic layer, the free layer having a magnetic moment switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, the second magnetic layer including an amorphous magnetic layer having at least one nonmagnetic constituent, the at least one nonmagnetic constituent being glass-forming; and

performing an anneal in a gas having an affinity for the at least one nonmagnetic constituent, the gas including at least one of a first gas and a second gas, the first gas forming a gaseous compound with the at least one nonmagnetic constituent, the second gas forming a solid compound with the at least one nonmagnetic constituent, the second gas being usable in the anneal performed after the magnetic junction has been defined, the solid compound residing at least on the plurality of sides of the magnetic junction.

2. The method of claim 1 wherein the at least one nonmagnetic constituent is B.

3. The method of claim 2 wherein the gaseous compound includes at least one of BF₃, BH₃ and BCl₃.

4. The method of claim 2 wherein the first gas includes at least one of CHF₃, CF₄, SF₆, CF₃Cl, NF₃, F, Cl, H, O and N.

5. The method of claim 2 wherein the step of performing the anneal further includes:

forming a plasma using the gas.

6. The method of claim 1 wherein the solid compound includes at least one of BO, BN, BS, BC, BP, BSi and BAl.

7. The method of claim 6 wherein the magnetic junction includes a top and wherein the method further includes:

removing the solid compound from the top of the magnetic junction.

8. The method of claim 1 wherein the amorphous magnetic layer includes CoFeB.

9. The method of claim 8 wherein the second magnetic layer consists of the amorphous magnetic layer.

10. The method of claim 1 wherein the first magnetic layer is between the second magnetic layer and the substrate.

11. The method of claim 1 wherein the second magnetic layer is between the first magnetic layer and the substrate.

12. The method of claim 1 further comprising:

providing at least one additional layer on the second magnetic layer.

13. A method for providing a magnetic junction residing on a substrate and usable in a magnetic device, the method comprising:

depositing a first magnetic layer;

depositing a nonmagnetic spacer layer;

depositing a second magnetic layer, the nonmagnetic spacer layer being between the first magnetic layer and the second magnetic layer, a free layer being one of the first magnetic layer and the second magnetic layer, a reference layer being an other of the first magnetic layer and the second magnetic layer, the second magnetic layer including a CoFeB layer;

defining the magnetic junction from the first magnetic layer, the second magnetic layer and the nonmagnetic spacer layer, the magnetic junction including a top and a plurality of sides; and

performing an anneal in a gas having an affinity for B after the step of defining the magnetic junction, the gas forming a solid compound with the B, the solid compound residing at least on the plurality of sides of the magnetic junction.

14. The method of claim 13 wherein the solid compound includes at least one of BO, BN, BS, BC, BP, BSi and BAl.

15. The method of claim 14 wherein the solid compound resides on the top of the magnetic junction, the method further comprising:

removing the solid compound from the top of the magnetic junction.