Reduction of chipping damage to MEMS structure

• US 9,738,511 B2
• Filed: 03/25/2014
• Issued: 08/22/2017
• Est. Priority Date: 09/13/2013
• Status: Active Grant

• Current Assignee: Invensense Incorporated (TDK Corporation)
• Original Assignee: Invensense Incorporated (TDK Corporation)
• Inventors: Shin, Jongwoo, Williams, Kirt Reed, Zhang, Cerina, Lei, Kuolung (Dino)
• Primary Examiner(s): Crawford, Latanya N
• Application Number:
  US14/225,275
• Publication Number:
  US 20150076631A1
• Time in Patent Office: 1,246 Days
• CPC Class Codes: B81C 1/00103 Structures having a predefined profile, e.g. sloped or rounded grooves
• CPC Class Codes: B81C 2201/0112 Bosch process
• CPC Class Codes: B81C 2201/0132 Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
• CPC Class Codes: B81C 2201/0133 Wet etching

Abstract

A MEMS (microelectromechanical systems) structure comprises a MEMS wafer. A MEMS wafer includes a cap with cavities bonded to a structural layer through a dielectric layer disposed between the cap and the structural layer. Unique configurations of MEMS devices and methods of providing such are set forth which provide for, in part, creating rounded, scalloped or chamfered MEMS profiles by shaping the etch mask photoresist reflow, by using a multi-step deep reactive ion etch (DRIE) with different etch characteristics, or by etching after DRIE.

Claims

1. A microelectromechanical systems (MEMS) device comprising:

a MEMS substrate, wherein the MEMS substrate includes a movable MEMS structure; and

an integrated-circuit (IC) substrate, wherein the MEMS substrate is bonded to the IC substrate, wherein a profile of the movable MEMS structure includes substantially rounded corners, wherein the profile is in a plane perpendicular to plane of the MEMS substrate, and wherein the MEMS substrate includes a silicon cap substrate including a cavity coupled to a MEMS structural layer, wherein the substantially rounded corners reside in the MEMS structural layer.

2. The MEMS device of claim 1, wherein the silicon cap substrate and the MEMS movable structure comprise any of single crystal silicon materials or polycrystalline silicon materials.

5. The MEMS device of claim 1, wherein a dielectric layer is disposed between the silicon cap substrate and the MEMS structural layer comprising the movable MEMS structure.

6. The MEMS device of claim 1, wherein the silicon cap substrate is fusion bonded to the MEMS structural layer.

3. A method for providing rounded corners on a microelectromechanical systems (MEMS) substrate comprising:

creating a patterned photoresist mask by patterning a photoresist mask defining MEMS structures on the MEMS substrate;

creating a rounded photoresist mask by applying high temperature to the patterned photoresist mask to round corners of the patterned photoresist mask;

shallow etching the MEMS substrate using the rounded photoresist mask;

non-selective etching of the MEMS substrate resulting in rounding of top corners in the MEMS substrate;

removing the rounded photoresist mask and applying a second photoresist mask defining at least one shape of the MEMS structures; and

applying a deep reactive ion etch (DRIE) process to achieve vertical sidewalls in a remaining portion of the MEMS structures.

4. A method comprising:

etching a microelectromechanical systems (MEMS) substrate to create rounded top corners of MEMS structures in the MEMS substrate as defined by a first photoresist mask;

applying a second photoresist mask to the MEMS substrate that defines at least one shape of the MEMS structures; and

etching the MEMS substrate with a deep reactive ion etch (DRIE) process to achieve vertical sidewalls in a remaining portion of the MEMS structures.