CMOS-MEMS integrated device including multiple cavities at different controlled pressures and methods of manufacture
First Claim
1. A method of preparing a first substrate comprising the steps:
- depositing in a fixed location, a temperature-activated outgassing source layer comprising a non-gettering out-gassing substance on the first substrate, and resulting in two cross-sections, wherein in one of the two cross-sections a top surface of the temperature-activated outgassing source layer is exposed creating an exposed outgassing source layer and in the other of the two cross-sections there is no exposed outgassing source layer, and wherein the non-gettering out-gassing substance is configured to desorb one or more gases as a result of raising its temperature.
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Abstract
An integrated MEMS device comprises two substrates where the first and second substrates are coupled together and have two enclosures there between. One of the first and second substrates includes an outgassing source layer and an outgassing barrier layer to adjust pressure within the two enclosures. The method includes depositing and patterning an outgassing source layer and a first outgassing barrier layer on the substrate, resulting in two cross-sections. In one of the two cross-sections a top surface of the outgassing source layer is not covered by the outgassing barrier layer and in the other of the two cross-sections the outgassing source layer is encapsulated in the outgassing barrier layer. The method also includes depositing conformally a second outgassing barrier layer and etching the second outgassing barrier layer such that a spacer of the second outgassing barrier layer is left on sidewalls of the outgassing source layer.
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Citations
8 Claims
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1. A method of preparing a first substrate comprising the steps:
depositing in a fixed location, a temperature-activated outgassing source layer comprising a non-gettering out-gassing substance on the first substrate, and resulting in two cross-sections, wherein in one of the two cross-sections a top surface of the temperature-activated outgassing source layer is exposed creating an exposed outgassing source layer and in the other of the two cross-sections there is no exposed outgassing source layer, and wherein the non-gettering out-gassing substance is configured to desorb one or more gases as a result of raising its temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
Specification