Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same
First Claim
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1. An apparatus, comprising:
- a semiconductor wafer having a complementary metal oxide semiconductor (CMOS) integrated circuit and an electrode;
a conductive membrane bonded to the semiconductor wafer to form a bonded structure such that a sealed cavity exists between an uppermost portion of the semiconductor wafer and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode; and
the uppermost portion of the semiconductor wafer providing an electrical connection between the CMOS integrated circuit and the first side of the conductive membrane.
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Abstract
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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Citations
24 Claims
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1. An apparatus, comprising:
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a semiconductor wafer having a complementary metal oxide semiconductor (CMOS) integrated circuit and an electrode; a conductive membrane bonded to the semiconductor wafer to form a bonded structure such that a sealed cavity exists between an uppermost portion of the semiconductor wafer and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode; and the uppermost portion of the semiconductor wafer providing an electrical connection between the CMOS integrated circuit and the first side of the conductive membrane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method, comprising:
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bonding a transfer wafer to a semiconductor wafer, the semiconductor wafer having a complementary metal oxide semiconductor (CMOS) integrated circuit and an electrode; removing at least a portion of the transfer wafer to define a conductive membrane such that a sealed cavity exists between an uppermost portion of the semiconductor wafer and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode; and the uppermost portion of the semiconductor wafer providing an electrical connection between the CMOS integrated circuit and the first side of the conductive membrane. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification