Manufacturing method of semiconductor device

• US 9,741,578 B2
• Filed: 02/03/2015
• Issued: 08/22/2017
• Est. Priority Date: 02/12/2014
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Yasunishi, Kota, Oka, Tohru, Murakami, Noriaki
• Primary Examiner(s): Henry, Caleb
• Assistant Examiner(s): AMER, MOUNIR S
• Application Number:
  US14/613,194
• Publication Number:
  US 20150228493A1
• Time in Patent Office: 931 Days
• CPC Class Codes: H01L 21/28575 on semiconductor bodies comprising AIIIBV compounds
• CPC Class Codes: H01L 21/28581 Deposition of Schottky electrodes
• CPC Class Codes: H01L 21/30617 Anisotropic liquid etching
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/452 on AIII-BV compounds
• CPC Class Codes: H01L 29/475 on AIII-BV compounds

Abstract

A technique of reducing the contact resistance between a semiconductor substrate and a metal layer is provided. A manufacturing method of a semiconductor device comprises a process of forming a metal layer on an N surface of a nitride semiconductor substrate. The process of forming the metal layer includes a first process of forming a metal layer by sputtering at a film formation rate controlled to 4 nm/minute or lower.

Claims

1. A manufacturing method of a semiconductor device, the method comprising:

disposing a metal layer on an N surface of a nitride semiconductor substrate,

wherein the disposing the metal layer includes a first process of forming the metal layer by sputtering at a film formation rate controlled to 4 nm/ minute or lower such that the metal layer is formed with flicking of carbon present on the N surface in a non-oxygen atmosphere and an Ar atmosphere; and

performing a wet etching on the N surface of the nitride semiconductor substrate, prior to the sputtering,

wherein the N surface includes a nitrogen surface,

wherein, in the nitride semiconductor substrate, the N surface is located on an opposite side of a surface that is arranged for epitaxial growth, and

wherein the film formation rate is controlled by an applied voltage.

2. The manufacturing method of the semiconductor device according to claim 1, wherein the film formation rate in the first process is equal to or higher than 0.01 nm/minute.

3. The manufacturing method of the semiconductor device according to claim 1, wherein the nitride semiconductor substrate mainly comprises gallium nitride.

4. The manufacturing method of the semiconductor device according to claim 1, wherein the first process includes a process of forming a layer comprising titanium.

5. The manufacturing method of the semiconductor device according to claim 4, wherein the disposing the metal layer includes a process of forming a layer mainly comprising aluminum, after the process of forming the layer comprising titanium.

6. The manufacturing method of the semiconductor device according to claim 1, wherein the wet etching is performed using a solution containing tetramethylammonium hydroxide (TMAH).

7. The manufacturing method of the semiconductor device according to claim 1, wherein the wet etching is performed using a solution having a temperature of not higher than 60°

C.

8. The manufacturing method of the semiconductor device according to claim 1, wherein the wet etching is performed for a time of not shorter than 10 seconds.

9. The manufacturing method of the semiconductor device according to claim 1, wherein the wet etching is performed for a time of not longer than 300 seconds.

10. The manufacturing method of the semiconductor device according to claim 1, further comprising:

performing a heat treatment, after the disposing the metal layer.

11. The manufacturing method of the semiconductor device according to claim 10, wherein the heat treatment is performed at a temperature of not lower than 350°

C. and not higher than 550°

C.

12. The manufacturing method of the semiconductor device according to claim 1, wherein the disposing the metal layer includes a second process of forming the metal layer by sputtering at a film formation rate controlled to be higher than 4 nm/ minute, after the first process.

13. The manufacturing method of the semiconductor device according to claim 1, wherein the disposing the metal layer on the N surface of the nitride semiconductor substrate comprises directly disposing the metal layer on the N surface of the nitride semiconductor substrate that is exposed.

14. The manufacturing method of the semiconductor device according to claim 1, wherein the metal layer abuts the N surface of the nitride semiconductor substrate.

15. The manufacturing method of the semiconductor device according to claim 1, wherein the disposing the metal layer comprises:

disposing a first metal layer comprising titanium on the N surface of the nitride semiconductor substrate.

16. The manufacturing method of the semiconductor device according to claim 15, wherein the disposing the metal layer further comprises:

disposing a second metal layer comprising aluminum on a surface of the first metal layer.

20. The manufacturing method of the semiconductor device according to claim 1, wherein the N surface includes a −

C polar surface.

21. The manufacturing method of the semiconductor device according to claim 1, wherein nitrogen atoms are arrayed in a layer on the N surface.

22. The manufacturing method of the semiconductor device according to claim 1, wherein the metal layer extends from an edge of the N surface of the nitride semiconductor substrate to another edge of the N surface of the nitride semiconductor substrate.

17. A manufacturing method of a semiconductor device, the method comprising:

disposing a metal layer on an exposed N surface of a nitride semiconductor substrate,

wherein the disposing the metal layer includes sputtering at a controlled film formation rate such that the metal layer is formed with flicking of carbon present on the N surface in a non-oxygen atmosphere and an Ar atmosphere; and

performing a wet etching on the N surface of the nitride semiconductor substrate, prior to the sputtering,

wherein the N surface includes a nitrogen surface,

wherein, in the nitride semiconductor substrate, the N surface is located on an opposite side of a surface that is arranged for epitaxial growth, and

wherein the film formation rate is controlled by an applied voltage.

18. The manufacturing method of the semiconductor device according to claim 17, wherein the film formation rate is 4 nm/ minute or lower, and

wherein the metal layer abuts the exposed surface of the nitride semiconductor substrate.

19. The manufacturing method of the semiconductor device according to claim 18, wherein the disposing the metal layer comprises:

disposing a first metal layer comprising titanium on the exposed surface of the nitride semiconductor substrate; and

disposing a second metal layer comprising aluminum on a surface of the first metal layer.