Optoelectronic device

• US 9,741,763 B2
• Filed: 11/07/2016
• Issued: 08/22/2017
• Est. Priority Date: 05/19/2014
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Chen, Chao Hsing, Wang, Jia Kuen, Shen, Chien Fu, Ko, Chun Teng
• Primary Examiner(s): HOANG, QUOC DINH
• Application Number:
  US15/330,883
• Publication Number:
  US 20170069682A1
• Time in Patent Office: 288 Days
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/64 Heat extraction or cooling elements
• CPC Class Codes: H01L 33/644 in intimate contact or integrated with parts of the device other than the semiconductor body

Abstract

An optoelectronic device includes a substrate having a first side, a second side opposite to the first side; a first optoelectronic unit formed on the first side of the substrate; a second optoelectronic unit formed on the first side of the substrate; a third optoelectronic unit formed on the first side of the substrate; a first electrode formed on and electrically connected to the first optoelectronic unit; a second electrode formed on and electrically connected to the second optoelectronic unit; a first pad formed on the first side of the substrate and electrically insulated from the third optoelectronic unit; and a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.

Claims

1. An optoelectronic device, comprising:

a substrate having a first side, a second side opposite to the first side;

a first optoelectronic unit formed on the first side of the substrate;

a second optoelectronic unit formed on the first side of the substrate;

a third optoelectronic unit formed on the first side of the substrate;

a first electrode formed on and electrically connected to the first optoelectronic unit;

a second electrode formed on and electrically connected to the second optoelectronic unit;

a first pad formed on the first side of the substrate and electrically insulated from the third optoelectronic unit; and

a plurality of conductor arrangement structures electrically connected to the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit.

2. The optoelectronic device of claim 1, wherein the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit are arranged in an array.

3. The optoelectronic device of claim 1, wherein the conductor arrangement structures are separated from one another, and one of the conductor arrangement structures is electrically connected with the third optoelectronic unit and one of the first optoelectronic unit or the second optoelectronic unit.

4. The optoelectronic device of claim 1, further comprising a fourth optoelectronic unit wherein the conductor arrangement structure are separated from one another and one of the conductor arrangement structure is electrically connected with the third optoelectronic unit and the fourth optoelectronic unit.

5. The optoelectronic device of claim 4, further comprising a second pad formed on the fourth optoelectronic unit.

6. The optoelectronic device of claim 1, wherein the third optoelectronic unit is disposed next to the first optoelectronic unit or the second optoelectronic unit.

7. The optoelectronic device of claim 1, wherein each of the first optoelectronic unit, the second optoelectronic unit, and the third optoelectronic unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer.

8. The optoelectronic device of claim 7, further comprising a contact layer or a metal reflection layer formed on the second semiconductor layer of one of the first optoelectronic unit, the second optoelectronic unit, or the third optoelectronic unit.

9. The optoelectronic device of claim 1, further comprising a carrier plate comprising a first carrier electrode and a second carrier electrode wherein the first carrier electrode and the first electrode are jointed and the second carrier electrode and the second electrode are jointed to form a flip chip structure.

10. The optoelectronic device of claim 1, further comprising an insulating structure formed on one of the first optoelectronic unit, the second optoelectronic unit, or the third optoelectronic unit.

11. The optoelectronic device of claim 10, wherein the insulating structure comprises a first insulating layer and a second insulating layer, the first insulating layer is formed on the third optoelectronic unit and the second insulating layer is formed on the first insulating layer, and a projection of the first pad, vertical to the first side of the substrate, is not formed on the first insulating layer.

12. The optoelectronic device of claim 10, further comprising a trench formed between the first optoelectronic unit and the third optoelectronic unit or between the second optoelectronic unit and the third optoelectronic unit, and portions of the conductor arrangement structures and the insulating structure stacked disposed in the trench.

13. The optoelectronic device of claim 1, wherein the conductor arrangement structures have a reflectivity of more than 80% for a light emitting from the first optoelectronic unit, the second optoelectronic unit, or the third optoelectronic unit.

14. The optoelectronic device of claim 1, further comprising a supporting device formed on the second side of the substrate and covering a side wall of the substrate.

15. The optoelectronic device of claim 1, wherein the first pad is formed on the third optoelectronic unit and/or disposed between the first electrode and the second electrode.

16. The optoelectronic device of claim 1, wherein the first pad has a stacked structure the same as that of the first electrode or the second electrode.

17. The optoelectronic device of claim 16, further comprising a third electrode formed on the first electrode and electrically connected therewith, and a fourth electrode formed on the second electrode and electrically connected therewith, wherein the third electrode or the fourth electrode comprises an outer boundary, the substrate comprises a first outer boundary, wherein the outer boundary is beyond the first outer boundary.

18. The optoelectronic device of claim 17, further comprising an optical layer between the third electrode and the first electrode and between the fourth electrode and the second electrode, wherein the optical layer comprises a second outer boundary and the first outer boundary is formed in the second outer boundary.

19. The optoelectronic device of claim 1, further comprising one or a plurality of optoelectronic units, wherein the fire optoelectronic unit, the second optoelectronic unit, the third optoelectronic units, and the one or the plurality of optoelectronic units are arranged in a square matrix.

20. The optoelectronic device of claim 19, wherein the first optoelectronic unit is disposed in a first row of the square matrix, and the second optoelectronic unit is disposed in a last row of the square matrix.