×

Bulk nanosheet with dielectric isolation

  • US 9,741,792 B2
  • Filed: 10/21/2015
  • Issued: 08/22/2017
  • Est. Priority Date: 10/21/2015
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a nanosheet device structure with dielectric isolation, the method comprising the steps of:

  • forming a plurality of nanosheets as a stack on a bulk semiconductor wafer;

    patterning the nanosheets to form one or more nanowire stacks and one or more trenches between the nanowire stacks;

    forming spacers covering sidewalls of the nanowire stacks; and

    oxidizing a top portion of the bulk semiconductor wafer through the trenches, wherein the oxidizing step forms a dielectric isolation region in the top portion of the bulk semiconductor wafer,wherein the method further comprises the step of;

    implanting at least one dopant into the top portion of the bulk semiconductor wafer prior to performing the step of forming the nanosheets on the bulk semiconductor wafer, wherein the at least one dopant is configured to increase an oxidation rate of the top portion of the bulk semiconductor wafer.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×