Nonvolatile charge trap memory device having a deuterated layer in a multi-layer charge-trapping region
First Claim
1. A charge trap memory device comprising:
- a semiconductor material structure having a vertical channel extending from a first diffusion region formed in a semiconducting material to a second diffusion region formed over the first diffusion region, the vertical channel electrically connecting the first diffusion region to the second diffusion region;
a tunnel dielectric layer disposed surrounding at least partially the vertical channel; and
a multi-layer charge-trapping region including a first deuterated layer disposed abutting the tunnel dielectric layer, a first nitride layer disposed abutting the first deuterated layer, and a second nitride layer comprising a deuterium-free trap-dense, oxygen-lean nitride disposed abutting the first nitride layer,wherein the second nitride layer comprises a majority of charge traps distributed in the multi-layer charge-trapping region.
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Abstract
A charge trap memory device is provided. In one embodiment, the charge trap memory device includes a semiconductor material structure having a vertical channel extending from a first diffusion region formed in a semiconducting material to a second diffusion region formed over the first diffusion region, the vertical channel electrically connecting the first diffusion region to the second diffusion region. A tunnel dielectric layer is disposed on the vertical channel, a multi-layer charge-trapping region including a first deuterated layer disposed on the tunnel dielectric layer, a first nitride layer disposed on the first deuterated layer, and a second nitride layer comprising a deuterium-free trap-dense, oxygen-lean nitride disposed on the first nitride layer. The second nitride layer includes a majority of charge traps distributed in the multi-layer charge-trapping region.
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Citations
20 Claims
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1. A charge trap memory device comprising:
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a semiconductor material structure having a vertical channel extending from a first diffusion region formed in a semiconducting material to a second diffusion region formed over the first diffusion region, the vertical channel electrically connecting the first diffusion region to the second diffusion region; a tunnel dielectric layer disposed surrounding at least partially the vertical channel; and a multi-layer charge-trapping region including a first deuterated layer disposed abutting the tunnel dielectric layer, a first nitride layer disposed abutting the first deuterated layer, and a second nitride layer comprising a deuterium-free trap-dense, oxygen-lean nitride disposed abutting the first nitride layer, wherein the second nitride layer comprises a majority of charge traps distributed in the multi-layer charge-trapping region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A charge trap memory device comprising:
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a semiconductor material structure having a vertical channel extending from a first diffusion region formed in a semiconducting material to a second diffusion region formed over the first diffusion region, the vertical channel electrically connecting the first diffusion region to the second diffusion region; a tunnel dielectric layer disposed surrounding at least partially the vertical channel; and a multi-layer charge-trapping region including a first deuterated layer disposed abutting the tunnel dielectric layer, a first nitride layer disposed abutting the first deuterated layer, a second nitride layer disposed abutting the first nitride layer, and a second deuterated layer disposed abutting the second nitride layer, wherein the first nitride layer comprises a substantially trap-free oxygen-rich nitride layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A charge trap memory device comprising:
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a semiconductor material structure having a vertical channel extending from a first diffusion region formed in a semiconducting material to a second diffusion region formed over the first diffusion region, the vertical channel electrically connecting the first diffusion region to the second diffusion region; a tunnel dielectric layer disposed surrounding at least partially the vertical channel; and a multi-layer charge-trapping region including a first deuterated layer disposed abutting the tunnel dielectric layer, a first nitride layer disposed abutting the first deuterated layer, a second nitride layer disposed abutting the first nitride layer, and a second deuterated layer disposed abutting the second nitride layer, wherein the second deuterated layer has a concentration of deuterium lower than a concentration of deuterium in the first deuterated layer. - View Dependent Claims (17, 18, 19, 20)
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Specification