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Semiconductor device and manufacturing method thereof

  • US 9,741,829 B2
  • Filed: 05/15/2015
  • Issued: 08/22/2017
  • Est. Priority Date: 05/15/2015
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device including a Fin FET, the method comprising:

  • forming a fin structure over a substrate, the fin structure extending in a first direction and including an upper layer, a part of the upper layer being exposed from an isolation insulating layer;

    forming a source/drain structure in the fin structure;

    after forming the source/drain structure in the fin structure, forming a gate structure over a part of the fin structure, the gate structure extending in a second direction perpendicular to the first direction;

    forming an interlayer dielectric layer over the fin structure, the source/drain structure and the gate structure;

    forming a contact hole in the interlayer dielectric layer so as to expose the source/drain structure;

    directly depositing a cap layer including silicon phosphide, by using a silicon containing gas and a phosphorous containing gas, on a bottom surface and sidewalls of the contact hole and on an entire upper surface of the interlayer dielectric layer; and

    forming a contact metal layer over the cap layer.

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