Semiconductor device and manufacturing method thereof
First Claim
1. A method of manufacturing a semiconductor device including a Fin FET, the method comprising:
- forming a fin structure over a substrate, the fin structure extending in a first direction and including an upper layer, a part of the upper layer being exposed from an isolation insulating layer;
forming a source/drain structure in the fin structure;
after forming the source/drain structure in the fin structure, forming a gate structure over a part of the fin structure, the gate structure extending in a second direction perpendicular to the first direction;
forming an interlayer dielectric layer over the fin structure, the source/drain structure and the gate structure;
forming a contact hole in the interlayer dielectric layer so as to expose the source/drain structure;
directly depositing a cap layer including silicon phosphide, by using a silicon containing gas and a phosphorous containing gas, on a bottom surface and sidewalls of the contact hole and on an entire upper surface of the interlayer dielectric layer; and
forming a contact metal layer over the cap layer.
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Accused Products
Abstract
A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.
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Citations
19 Claims
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1. A method of manufacturing a semiconductor device including a Fin FET, the method comprising:
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forming a fin structure over a substrate, the fin structure extending in a first direction and including an upper layer, a part of the upper layer being exposed from an isolation insulating layer; forming a source/drain structure in the fin structure; after forming the source/drain structure in the fin structure, forming a gate structure over a part of the fin structure, the gate structure extending in a second direction perpendicular to the first direction; forming an interlayer dielectric layer over the fin structure, the source/drain structure and the gate structure; forming a contact hole in the interlayer dielectric layer so as to expose the source/drain structure; directly depositing a cap layer including silicon phosphide, by using a silicon containing gas and a phosphorous containing gas, on a bottom surface and sidewalls of the contact hole and on an entire upper surface of the interlayer dielectric layer; and forming a contact metal layer over the cap layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a semiconductor device including a Fin FET, the method comprising:
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forming a fin structure over a substrate, the fin structure extending in a first direction and including an upper layer, a part of the upper layer being exposed from an isolation insulating layer; forming a dummy gate structure over a part of the fin structure, the dummy gate structure extending in a second direction crossing the first direction; recessing the fin structure not covered by the dummy gate structure; forming a source/drain structure in the recessed fin structure; forming an insulating layer over the dummy gate structure and the source/drain structure; removing the dummy gate structure, thereby forming a gate space; after forming the source/drain structure in the recessed fin structure and after removing the dummy gate structure, forming a metal gate structure in the gate space; forming a contact hole in the insulating layer so as to expose the source/drain structure; directly depositing a cap layer including silicon phosphide, by using a silicon containing gas and a phosphorous containing gas, on a bottom surface and sidewalls of the contact hole and on an entire upper surface of the insulating layer; and forming a contact metal layer over the cap layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method of manufacturing a semiconductor device including a Fin FET, the method comprising:
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forming plural fin structures over a substrate, the fin structures extending in a first direction, each of the fin structures including an upper layer, a part of the upper layer being exposed from an isolation insulating layer; forming source/drain structures in the fin structures, respectively; after forming the source/drain structures in the fin structures, forming one or more gate structures over a part of the fin structures, the one or more gate structures extending in a second direction perpendicular to the first direction; forming an interlayer dielectric layer over the fin structures and the source/drain structures; forming a contact hole in the interlayer dielectric layer so as to expose the source/drain structures; directly depositing a cap layer including silicon phosphide, by using a silicon containing gas and a phosphorous containing gas, on a bottom surface and sidewalls of the contact hole and on an entire upper surface of the interlayer dielectric layer; and forming a contact metal layer over the cap layer. - View Dependent Claims (16, 17, 18, 19)
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Specification