Semiconductor device
First Claim
1. A semiconductor device comprising:
- a gate insulating film; and
an oxide semiconductor film in direct contact with the gate insulating film,wherein the gate insulating film includes silicon and oxygen,wherein the oxide semiconductor film includes a first region in direct contact with the gate insulating film,wherein the first region includes silicon,wherein a concentration of silicon in the first region is lower than or equal to 1.0 at. %, andwherein a concentration of silicon included in a region of the oxide semiconductor film other than the first region is lower than the concentration of silicon included in the first region.
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Accused Products
Abstract
A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.
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Citations
24 Claims
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1. A semiconductor device comprising:
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a gate insulating film; and an oxide semiconductor film in direct contact with the gate insulating film, wherein the gate insulating film includes silicon and oxygen, wherein the oxide semiconductor film includes a first region in direct contact with the gate insulating film, wherein the first region includes silicon, wherein a concentration of silicon in the first region is lower than or equal to 1.0 at. %, and wherein a concentration of silicon included in a region of the oxide semiconductor film other than the first region is lower than the concentration of silicon included in the first region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate insulating film; an oxide semiconductor film in direct contact with the gate insulating film; and an insulating film in contact with the oxide semiconductor film, wherein the gate insulating film includes silicon and oxygen, wherein the oxide semiconductor film includes a first region in direct contact with the gate insulating film, wherein the first region includes silicon, wherein a concentration of silicon in the first region is lower than or equal to 1.0 at. %, and wherein a concentration of silicon included in a region of the oxide semiconductor film other than the first region is lower than the concentration of silicon included in the first region. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a gate insulating film; an oxide semiconductor film in direct contact with the gate insulating film; and an insulating film in contact with the oxide semiconductor film, wherein each of the gate insulating film and the insulating film includes silicon and oxygen, wherein the oxide semiconductor film includes a first region in direct contact with the gate insulating film, wherein the oxide semiconductor film includes a second region in contact with the insulating film, wherein each of the first region and the second region includes silicon, wherein a concentration of silicon in the first region is lower than or equal to 1.0 at. %, wherein a concentration of silicon in the second region is lower than or equal to 1.0 at. %, and wherein a concentration of silicon included in a region of the oxide semiconductor film other than the first region and the second region is lower than the concentrations of silicon included in the first region and the second region. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification