×

Semiconductor device

  • US 9,741,860 B2
  • Filed: 04/09/2015
  • Issued: 08/22/2017
  • Est. Priority Date: 09/29/2011
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a gate insulating film; and

    an oxide semiconductor film in direct contact with the gate insulating film,wherein the gate insulating film includes silicon and oxygen,wherein the oxide semiconductor film includes a first region in direct contact with the gate insulating film,wherein the first region includes silicon,wherein a concentration of silicon in the first region is lower than or equal to 1.0 at. %, andwherein a concentration of silicon included in a region of the oxide semiconductor film other than the first region is lower than the concentration of silicon included in the first region.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×