Semiconductor light-emitting device

• US 9,741,896 B2
• Filed: 06/06/2016
• Issued: 08/22/2017
• Est. Priority Date: 11/10/2015
• Status: Active Grant

• Current Assignee: PlayNitride Display Co., Ltd.
• Original Assignee: PlayNitride Inc.
• Inventors: Lai, Yen-Lin, Wu, Jyun-De
• Primary Examiner(s): Rodriguez, Armando
• Application Number:
  US15/174,855
• Publication Number:
  US 20170133552A1
• Time in Patent Office: 442 Days
• CPC Class Codes: H01L 33/025 Physical imperfections, e.g. particular concentration or distribution of impurities
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/325 characterised by the doping materials
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/3054 p-doping
• CPC Class Codes: H01S 5/3063 using Mg
• CPC Class Codes: H01S 5/3086 doping of the active layer
• CPC Class Codes: H01S 5/3216 quantum well or superlattice cladding layers
• CPC Class Codes: H01S 5/3425 comprising couples wells or superlattices
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Abstract

A semiconductor light-emitting device including a P-type semiconductor cladding layer, an N-type semiconductor layer, a light-emitting layer, and a hole injection layer is provided. The P-type semiconductor cladding layer is doped with magnesium. The light-emitting layer is disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer. The hole injection layer is disposed between the P-type semiconductor cladding layer and the light-emitting layer. The hole injection layer includes a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers. The chemical formula of each of the semiconductor material layers is Al_xIn_yGa_1-x-yN, and 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.

Claims

1. A semiconductor light-emitting device, comprising:

a P-type semiconductor cladding layer, wherein the P-type semiconductor cladding layer is doped with magnesium;

an N-type semiconductor layer;

a light-emitting layer disposed between the P-type semiconductor cladding layer and the N-type semiconductor layer;

a hole injection layer disposed between the P-type semiconductor cladding layer and the light-emitting layer, wherein the hole injection layer comprises a first super lattice structure formed by alternately stacking a plurality of magnesium nitride layers and a plurality of semiconductor material layers, a chemical formula of each of the semiconductor material layers is Al_xIn_yGa_1-x-yN, and 0≦

x≦

1, 0≦

y≦

1, and 0≦

x+y≦

1; and

an EBL disposed between the P-type semiconductor cladding layer and the light-emitting layer, wherein the hole injection layer is disposed between the EBL and the light-emitting layer, and a bandgap of the EBL is greater than a bandgap of the light-emitting layer.

2. The semiconductor light-emitting device of claim 1, wherein a thickness ratio of the magnesium nitride layer and the semiconductor material layer is within a range of 0.1 to 1.5.

3. The semiconductor light-emitting device of claim 1, wherein each of the semiconductor material layers is doped with a Group IV element having a concentration within a range of 10¹⁶ cm⁻

3 to 10²⁰ cm<sup>−

3</sup>.

4. The semiconductor device of claim 3, wherein the Group IV element is carbon.

5. The semiconductor light-emitting device of claim 1, wherein a magnesium concentration of the magnesium nitride layers is greater than a magnesium concentration of the P-type semiconductor cladding layer.

6. The semiconductor light-emitting device of claim 1, further comprising:

a P-type waveguide layer disposed between the P-type semiconductor cladding layer and the light-emitting layer;

an N-type waveguide layer disposed between the N-type semiconductor layer and the light-emitting layer; and

an N-type semiconductor cladding layer disposed between the N-type semiconductor layer and the N-type waveguide layer, wherein the hole injection layer is disposed between the P-type waveguide layer and the light-emitting layer, or disposed between the P-type waveguide layer and the P-type semiconductor cladding layer.

7. The semiconductor light-emitting device of claim 6, further comprising an electron blocking layer (EBL) disposed between the P-type semiconductor cladding layer and the P-type waveguide layer, wherein a bandgap of the EBL is greater than a bandgap of the light-emitting layer.

8. The semiconductor light-emitting device of claim 7, wherein the hole injection layer is disposed between the EBL and the P-type waveguide layer.

9. The semiconductor light-emitting device of claim 7, wherein the hole injection layer is disposed between the P-type waveguide layer and the light-emitting layer.

10. The semiconductor light-emitting device of claim 7, wherein a material of the EBL comprises aluminum gallium indium nitride (AlGaInN).

11. The semiconductor light-emitting device of claim 6, further comprising an EBL disposed between the P-type waveguide layer and the light-emitting layer, wherein the hole injection layer is disposed between the P-type waveguide layer and the EBL, and a bandgap of the EBL is greater than a bandgap of the light-emitting layer.

12. The semiconductor light-emitting device of claim 6, wherein a material of the P-type waveguide layer and a material of the N-type waveguide layer comprise indium gallium nitride (InGaN).

13. The semiconductor light-emitting device of claim 6, wherein the P-type semiconductor cladding layer or the N-type semiconductor cladding layer comprises a second super lattice structure formed by alternately stacking a plurality of AlGaInN layers and a plurality of gallium nitride layers.

14. The semiconductor light-emitting device of claim 1, wherein a material of the EBL comprises AlGaInN.