Light-emitting diode and method of manufacturing same

• US 9,741,913 B2
• Filed: 08/07/2012
• Issued: 08/22/2017
• Est. Priority Date: 08/11/2011
• Status: Expired due to Fees

• Current Assignee: Showa Denko KK (Resonac Holdings Corp.)
• Original Assignee: Showa Denko KK (Resonac Holdings Corp.)
• Inventors: Tokunaga, Yu, Matsumura, Atsushi
• Primary Examiner(s): Rizkallah, Kimberly
• Assistant Examiner(s): AMER, MOUNIR S
• Application Number:
  US14/237,261
• Publication Number:
  US 20140183588A1
• Time in Patent Office: 1,841 Days
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

Provided are a light-emitting diode which prevents degradation of reflectance and which enables high-luminosity light emission, and its manufacturing method. Such a light-emitting diode includes a substrate (1) upon which are provided, in this order, a reflecting layer (6), a transparent film (8) wherein multiple ohmic contact electrodes (7) are embedded at intervals, and a compound semiconductor layer (10) including a current diffusion layer (25) and a light-emitting layer (24) in this order. The periphery of the surface of each ohmic contact electrode (7) on the substrate (1) side are covered by the transparent film (8), and the ohmic contact electrodes (7) contact the reflecting layer (6) and the current diffusion layer (25).

Claims

1. A method of manufacture of a light-emitting diode comprising a substrate upon which are sequentially provided a reflecting layer, a transparent film wherein multiple ohmic contact electrodes are embedded at intervals, and a compound semiconductor layer sequentially including a current diffusion layer and a light-emitting layer, which comprises the following steps in this order:

a step of forming a compound semiconductor layer that includes a light-emitting layer and a current diffusion layer on a growth substrate in this order;

a step of forming multiple ohmic contact electrodes that are disposed at intervals on said current diffusion layer, wherein said ohmic contact electrodes are cylindrical members having a diameter of about 5 to 20 μ

m;

a step of forming a transparent film having a film thickness of 0.05 to 1.00 μ

m on said current diffusion layer so as to cover a periphery of the surface facing the substrate of each of said multiple ohmic contact electrodes and so as to expose a part of the surface except for the covered periphery;

a step of forming a reflecting layer on said transparent film, and on the exposed portions of said ohmic contact electrodes;

a step of forming a bonding layer on said reflecting layer;

a step of bonding a substrate to said bonding layer;

and a step of removing said growth substrate,

wherein current diffusion layer is composed of any one of GaP, {Al_xGa_(1-x)}_(1-y)In_yP, or {Al_xGa_(1-x)}_(1-y)In_yAs.

2. The method of manufacture of a light-emitting diode according to claim 1, wherein, in the step which forms said transparent film, said transparent film is formed so as to cover said multiple ohmic contact electrodes and said current diffusion layer, and then a part of the transparent film is removed from the surface of each of said ohmic contact electrodes apart from said periphery.

3. The method of manufacture of a light-emitting diode according to claim 1, wherein, in the step which forms said transparent film, a mask is formed on the surface of each of said ohmic contact electrodes apart from said periphery, and said transparent film is formed so as to cover said multiple ohmic contact electrodes and said current diffusion layer, after which said mask is removed.

4. The method of manufacture of a light-emitting diode according to claim 1, wherein the ohmic contact electrodes comprise Au.

5. The method of manufacturing of a light-emitting diode according to claim 1, wherein the compound semiconductor layer comprises a pn junction formed internally therein.

6. The method of manufacture of a light-emitting diode according to claim 1, wherein said ohmic contact electrodes each has a peripheral edge and said periphery is covered by said transparent film in a range that is within 1.5 μ

m from the peripheral edges of said ohmic contact electrodes.

7. A light-emitting diode comprising a substrate upon which is sequentially provided a reflecting layer, a transparent film having a film thickness of 0.05 to 1.00 μ

m wherein multiple ohmic contact electrodes having peripheral edges are embedded at intervals, and a compound semiconductor layer sequentially including a current diffusion layer and a light-emitting layer, wherein;

a periphery of a surface of each of said ohmic contact electrodes, wherein the surface is provided on and faces said substrate side, is covered by said transparent film and a part of the surface except for the periphery is exposed,

said ohmic contact electrodes contact said reflecting layer and said current diffusion layer,

said ohmic contact electrodes are cylindrical members having a diameter of about 5 to 20 μ

m, and

said current diffusion layer is composed of any one of GaP, {Al_xGa_(1-x)}_(1-y)In_yP, or {Al_xGa_(1-x)}_(1-y)In_yAs.

8. The light-emitting diode according to claim 7, wherein said periphery are in a range that is within 1.5 μ

m from the peripheral edges of said ohmic contact electrodes.

9. The light-emitting diode according to claim 7, wherein said reflecting layer is composed of any one of Au, Ag, Cu, or Al, or an alloy including one or more of these elements.

10. The light-emitting diode according to claim 7, wherein said transparent film is composed of any one of SiO₂, SiN, SiON, Al₂O₃, MgF₂, TiO₂, TiN, ZnO, ITO, or IZO.

11. The light-emitting diode according to claim 7, wherein the ohmic contact electrodes comprise Au.

12. The light-emitting diode according to claim 7, wherein the compound semiconductor layer comprises a pn junction formed internally therein.

13. The light-emitting diode according to claim 7, wherein said ohmic contact electrodes each has a peripheral edge and said periphery is covered by said transparent film in a range that is within 1.5 μ

m from the peripheral edges of said ohmic contact electrodes.