Memory cell having magnetic tunnel junction and thermal stability enhancement layer

• US 9,741,926 B1
• Filed: 05/18/2016
• Issued: 08/22/2017
• Est. Priority Date: 01/28/2016
• Status: Active Grant

• Current Assignee: Integrated Silicon Solution Incorporated (Uphill Investment Co.)
• Original Assignee: Spin Transfer Technologies, Inc.
• Inventors: Pinarbasi, Mustafa, Kardasz, Bartek
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US15/157,783
• Publication Number:
  US 20170222132A1
• Time in Patent Office: 461 Days
• CPC Class Codes: G11C 11/15 using multiple magnetic layers G11C11/155 takes precedence
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10B 61/10 comprising components having two electrodes, e.g. diodes or MIM elements
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a thermal stability enhancement layer over the free layer of a magnetic tunnel junction. The thermal stability enhancement layer improves the thermal stability of the free layer, increases the magnetic moment of the free layer, while also not causing the magnetic direction of the free layer to become in plan. The thermal stability enhancement layer can be comprised of a layer of CoFeB ferromagnetic material.

Claims

1. A magnetic device, comprising

a bottom electrode in a first plane;

a perpendicular synthetic antiferromagnetic structure, the perpendicular synthetic antiferromagnetic structure including a magnetic reference layer in a second plane, the magnetic reference layer having a magnetization direction that is perpendicular to the second plane and having a fixed magnetization direction;

a non-magnetic tunnel barrier layer in a third plane and disposed over the magnetic reference layer;

a free magnetic layer in a fourth plane and disposed over the non-magnetic tunnel barrier layer, the free magnetic layer having a magnetization vector that is perpendicular to the fourth plane and having a magnetization direction that can switch from a first magnetization direction to a second magnetization direction, the magnetic reference layer, the non-magnetic tunnel barrier layer and the free magnetic layer forming a magnetic tunnel junction;

a non-magnetic thermal stability enhancement coupling layer in a fifth plane and disposed over the free magnetic layer;

a magnetic thermal stability enhancement layer in a sixth plane that is physically separated from the free magnetic layer and coupled to the free magnetic layer by the non-magnetic thermal stability enhancement coupling layer, the magnetic thermal stability enhancement layer having a magnetization direction that is perpendicular to the sixth plane and having a magnetization direction that can switch from the first magnetization direction to the second magnetization direction, wherein switching of the magnetic thermal stability enhancement layer from the first magnetization direction to the second magnetization direction tracks switching in the magnetic free layer; and

a cap layer in a seventh plane and disposed over the thermal stability enhancement layer.

2. The magnetic device of claim 1, further comprising a current source that directs electrical current through the cap layer in the seventh plane, the magnetic thermal stability enhancement layer in a sixth plane, the non-magnetic thermal stability enhancement coupling layer in the fifth plane, the free magnetic layer in the fourth plane, the non-magnetic tunnel barrier layer in the third plane, the magnetic reference layer in the second plane, and the bottom electrode in the first plane.

3. The magnetic device of claim 1 wherein the magnetic thermal stability enhancement layer comprises a layer of CoFeB.

4. The magnetic device of claim 1 wherein the magnetic thermal stability enhancement layer comprises a film of CoFeB having a thickness between 1.3 nanometers and 1.5 nanometers.

5. The magnetic device of claim 4 wherein the free magnetic layer comprises CoFeB with a Ta interlayer.

6. The magnetic device of claim 5 wherein the free magnetic layer has a sum thickness of 1.6 nanometers.

7. The magnetic device of claim 1, wherein the perpendicular synthetic antiferromagnetic structure further comprises a first magnetic pSAF layer and a second magnetic pSAF layer, where the first magnetic pSAF layer is over the first electrode and is separated from the second magnetic pSAF layer by an exchange coupling layer.

8. The magnetic device of claim 7, further comprising a ferromagnetic coupling layer in between the second magnetic pSAF layer and the magnetic reference layer.

9. The magnetic device of claim 1 wherein the magnetic thermal stability enhancement layer is magnetically coupled to the free magnetic layer by the non-magnetic thermal stability enhancement coupling layer.

10. The magnetic device of claim 1 wherein the non-magnetic thermal stability enhancement coupling layer comprises a layer MgO.

11. The magnetic device of claim 10, wherein the layer of MgO has a thickness between 0.6-1.2 nm.

12. The magnetic device of claim 10, wherein the layer of MgO has a thickness 0.7 nm.

13. The magnetic device of claim 1, wherein the non-magnetic thermal stability enhancement coupling layer provides high interface perpendicular magnetic anisotropy between the magnetic thermal stability enhancement layer and free magnetic layer such that the magnetic direction of the free magnetic layer remains perpendicular to the fourth plane and the magnetic direction of the magnetic thermal stability enhancement layer remains perpendicular to the sixth plane.

14. A magnetic device, comprising:

a perpendicular magnetic tunnel junction having a magnetic reference layer and a magnetic free layer, the magnetic reference layer and the magnetic free layer separated by a non-magnetic tunneling barrier layer, the magnetic reference layer having a fixed magnetic direction that is perpendicular to its plane, the magnetic free layer having a variable magnetic direction that can switch between a first perpendicular magnetic direction and second perpendicular magnetic direction, wherein the first perpendicular magnetic direction and the second perpendicular magnetic direction is perpendicular to the magnetic free layer;

a magnetic thermal stability enhancement layer disposed over the magnetic free layer of the magnetic tunnel junction, the magnetic thermal stability enhancement layer comprising a magnetic material having a variable magnetic direction that can switch between the first perpendicular magnetic direction and the second perpendicular magnetic direction, wherein switching of the magnetic thermal stability enhancement layer from the first magnetization direction to the second magnetization direction tracks switching in the magnetic free layer; and

a non-magnetic thermal stability enhancement coupling layer disposed in between and physically separating the magnetic free layer of the magnetic tunnel junction and the magnetic thermal stability enhancement layer, the non-magnetic thermal stability enhancement coupling layer magnetically coupling the free magnetic layer and the magnetic thermal stability coupling layer.

15. The magnetic device of claim 14, further comprising:

an electrode;

a perpendicular synthetic antiferromagnetic structure coupled to the electrode, the perpendicular synthetic antiferromagnetic structure including the magnetic reference layer;

a cap layer disposed over the magnetic thermal stability enhancement layer.

16. The magnetic device of claim 15, wherein the perpendicular synthetic antiferromagnetic structure further comprises a first magnetic pSAF layer and a second magnetic pSAF layer, where the first magnetic pSAF layer is over the electrode and is separated from the second magnetic pSAF layer by a non-magnetic exchange coupling layer.

17. The magnetic device of claim 14 wherein the magnetic thermal stability enhancement layer comprises CoFeB.

18. The magnetic device of claim 14 wherein the magnetic thermal stability enhancement layer comprises a film of CoFeB having a thickness between 1.3 nanometers and 1.5 nanometers.

19. The magnetic device of claim 18 wherein the free magnetic layer comprises CoFeB with a Ta interlayer.

20. The magnetic device of claim 19 wherein the free magnetic layer has a sum thickness of 1.6 nanometers.

21. The magnetic device of claim 15, further comprising a current source that directs electrical current through the cap layer, the magnetic thermal stability enhancement layer, the non-magnetic thermal stability enhancement coupling layer, the free magnetic layer, the non-magnetic tunnel barrier layer, the perpendicular synthetic antiferromagnetic structure, and the electrode.

22. The magnetic device of claim 14, wherein the non-magnetic thermal stability enhancement coupling layer provides high interface perpendicular magnetic anisotropy between the magnetic thermal stability enhancement layer and free magnetic layer such that the magnetic direction of the free magnetic layer and the magnetic direction of the magnetic thermal stability enhancement layer remain out-of-plane.