Sealed devices comprising transparent laser weld regions

• US 9,741,963 B2
• Filed: 03/10/2016
• Issued: 08/22/2017
• Est. Priority Date: 05/10/2013
• Status: Active Grant

• Current Assignee: Corning Incorporated
• Original Assignee: Corning Incorporated
• Inventors: Dabich, II, Leonard Charles, Logunov, Stephan Lvovich, Quesada, Mark Alejandro, Streltsov, Alexander Mikhailovich
• Primary Examiner(s): MENZ, LAURA MARY
• Application Number:
  US15/066,704
• Publication Number:
  US 20160268541A1
• Time in Patent Office: 530 Days
• CPC Class Codes: B23K 26/206 Laser sealing
• CPC Class Codes: B32B 17/06 comprising glass as the main or only constituent of a layer, next to another layer of a specific material
• CPC Class Codes: B32B 2250/03 3 layers
• CPC Class Codes: B32B 2250/40 Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
• CPC Class Codes: B32B 2255/20 Inorganic coating
• CPC Class Codes: B32B 2310/0825 using IR radiation
• CPC Class Codes: B32B 2310/0831 using UV radiation
• CPC Class Codes: B32B 2310/0843 using laser
• CPC Class Codes: B32B 2457/206 Organic displays, e.g. OLED
• CPC Class Codes: B32B 37/06 characterised by the heating method
• CPC Class Codes: B32B 7/04 Interconnection of layers
• CPC Class Codes: C03B 23/203 Uniting glass sheets C03B23/24 takes precedence
• CPC Class Codes: C03C 2204/00 Glasses, glazes or enamels with special properties
• CPC Class Codes: C03C 2207/00 Compositions specially applicable for the manufacture of vitreous enamels
• CPC Class Codes: C03C 2218/32 After-treatment
• CPC Class Codes: C03C 23/0025 by a laser beam
• CPC Class Codes: C03C 27/06 Joining glass to glass by processes other than fusing fusing C03B23/20; units for use as elements for closing wall or like openings and comprising two or more parallel glass panes in spaced relationship, the panes being permanently secured together E06B3/66
• CPC Class Codes: C03C 27/08 with the aid of intervening metal
• CPC Class Codes: C03C 3/12 Silica-free oxide glass compositions
• CPC Class Codes: C03C 3/14 containing boron
• CPC Class Codes: C03C 3/16 : containing phosphorus
• CPC Class Codes: C03C 3/23 : containing halogen and at least one oxide, e.g. oxide of boron
• CPC Class Codes: C03C 3/247 : containing fluorine and phosphorus
• CPC Class Codes: C03C 4/0071 : for laserable glass
• CPC Class Codes: C03C 8/24 : Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
• CPC Class Codes: H10K 2102/00 : Constructional details relating to the organic devices covered by this subclass
• CPC Class Codes: H10K 50/8426 : Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 71/50 : Forming devices by joining two substrates together, e.g. lamination techniques

Abstract

Disclosed herein are sealed devices comprising a first substrate, a second substrate, an inorganic film between the first and second substrates, and at least one weld region comprising a bond between the first and second substrates. The weld region can comprise a chemical composition different from that of the inorganic film and the first or second substrates. The sealed devices may further comprise a stress region encompassing at least the weld region, in which a portion of the device is under a greater stress than the remaining portion of the device. Also disclosed herein are display and electronic components comprising such sealed devices.

Claims

1. A sealed device comprising:

an inorganic film formed over a surface of a first substrate, the inorganic film comprising;

20-100 mol % SnO,

0-50 mol % SnF₂, and

0-30 mol % P₂O₅ or B₂O₃;

a second substrate in contact with the inorganic film; and

a weld region comprising a bond formed between the first and second substrates and extending from a first depth in the first substrate to a second depth in the second substrate;

wherein the inorganic film comprises at least one inorganic film element and wherein one or both of the first and second substrates comprises at least one inorganic substrate element; and

wherein a first inorganic film element concentration of the first or second substrate in the weld region is higher than a second inorganic film element concentration of the first or second substrate outside the weld region.

2. The sealed device of claim 1, wherein the inorganic film, and optionally at least one of the first or second substrates is transmissive at wavelengths ranging from about 420 nm to about 750 nm.

3. The sealed device of claim 1, wherein the weld region is transparent.

4. The sealed device of claim 1, wherein at least one of the first or second substrates comprises a glass, glass-ceramic, ceramic, polymer, or metal.

5. The sealed device of claim 1, wherein both the first and second substrates comprise a glass or glass-ceramic.

6. The sealed device of claim 1, further comprising a second inorganic film formed over a surface of the second substrate.

7. The sealed device of claim 1, wherein the at least one inorganic film element is chosen from F, P, Sn, B, Bi, Zn, Ti, W, Ce, Nb, Pb, Fe, Va, Cr, Mn, Mg, Ge, and combinations thereof.

8. The sealed device of claim 1, wherein the first inorganic film element concentration is at least about 5 mol % higher than the second inorganic film element concentration.

9. The sealed device of claim 1, wherein a first substrate element concentration of the weld region is higher than a second substrate element concentration of the inorganic film outside the weld region.

10. The sealed device of claim 9, wherein the at least one inorganic substrate element is chosen from Al, B, Si, Na, Li, K, Mg, Ca, Ba, and combinations thereof.

11. The sealed device of claim 9, wherein the first substrate element concentration is at least about 30 mol % higher than the second substrate element concentration.

12. The sealed device of claim 1, wherein the inorganic film has a thickness ranging from about 0.1 microns to about 10 microns.

13. The sealed device of claim 1, wherein the weld region has a thickness ranging from about 0.3 microns to about 14 microns.

14. The sealed device of claim 1, further comprising a stress region encompassing at least the weld region, wherein a first stress in the stress region is greater than a second stress outside of the stress region.

15. The sealed device of claim 14, wherein the first stress ranges from greater than about 1 MPa to about 25 MPa.

16. The sealed device of claim 14, wherein a ratio of the first stress to the second stress ranges from about 1.1:

1 to about 25;

1.

17. The sealed device of claim 14, wherein the stress region has a thickness ranging from about 20 microns to about 500 microns.

18. A sealed device comprising:

an inorganic film formed over a surface of a first substrate, the inorganic film comprising;

20-100 mol % SnO,

0-50 mol % SnF₂ and

0-30 mol % P₂O₅ or B₂O₃;

a second substrate in contact with the inorganic film; and

a weld region comprising a bond formed between the first and second substrates and extending from a first depth in the first substrate to a second depth in the second substrate;

wherein the inorganic film comprises at least one inorganic film element and wherein one or both of the first and second substrates comprises at least one inorganic substrate element; and

wherein a first substrate element concentration of the weld region is higher than a second substrate element concentration of the inorganic film outside the weld region.

19. A sealed device comprising:

an inorganic film formed over a surface of a first substrate, the inorganic film comprising;

20-100 mol % SnO,

0-50 mol % SnF₂, and

0-30 mol % P₂O₅ or B₂O₃;

a second substrate in contact with the inorganic film; and

a weld region comprising a bond formed between the first and second substrates;

wherein one or both of the first and second substrates comprises at least one inorganic substrate element; and

wherein the weld region is enriched with the at least one inorganic substrate element as compared to a portion of the inorganic film outside of the weld region.

20. The sealed device of claim 19, wherein the weld region comprises a first inorganic substrate element concentration at least 30 mol % greater than a second inorganic substrate element concentration in the portion of the inorganic film outside of the weld region.

21. A sealed device comprising:

an inorganic film formed over a surface of a first substrate, the inorganic film comprising;

20-100 mol % SnO,

0-50 mol % SnF₂ and

0-30 mol % P₂O₅ or B₂O₃;

a second substrate in contact with the inorganic film; and

a weld region comprising a bond formed between the first and second substrates;

wherein the inorganic film comprises at least one inorganic film element;

wherein the first substrate comprises a first portion in the weld region and a second portion outside of the weld region; and

wherein the first portion is enriched with the at least one inorganic film element as compared to the second portion.

22. The sealed device of claim 21, wherein the first portion comprises a first inorganic film element concentration at least 5 mol % greater than a second inorganic film element concentration in the second portion.

23. The sealed device of claim 21, wherein the first portion extends from a sealing interface into the first substrate to a depth ranging from about 0.1 μ

m to about 2 μ

m.

24. The sealed device of claim 21, wherein the second substrate comprises a third portion in the weld region and a fourth portion outside of the weld region, and wherein the third portion is enriched with the at least one inorganic film element as compared to the fourth portion.

25. A sealed device comprising:

an inorganic film formed over a surface of a first substrate, the inorganic film comprising;

10-80 mol % B₂O_3,

5-60 mol % Bi₂O₃, and

0-70 mol % ZnO;

a second substrate in contact with the inorganic film; and

a weld region comprising a bond formed between the first and second substrates and extending from a first depth in the first substrate to a second depth in the second substrate;

wherein the inorganic film comprises at least one inorganic film element and wherein one or both of the first and second substrates comprises at least one inorganic substrate element; and

wherein a first inorganic film element concentration of the first or second substrate in the weld region is higher than a second inorganic film element concentration of the first or second substrate outside the weld region.

26. The sealed device of claim 25, wherein the inorganic film, and optionally at least one of the first or second substrates is transmissive at wavelengths ranging from about 420 nm to about 750 nm.

27. The sealed device of claim 25, wherein the weld region is transparent.

28. The sealed device of claim 25, wherein at least one of the first or second substrates comprises a glass, glass-ceramic, ceramic, polymer, or metal.

29. The sealed device of claim 25, wherein both the first and second substrates comprise a glass or glass-ceramic.

30. The sealed device of claim 25, further comprising a second inorganic film formed over a surface of the second substrate.

31. The sealed device of claim 25, wherein the at least one inorganic film element is chosen from F, P, Sn, B, Bi, Zn, Ti, W, Ce, Nb, Pb, Fe, Va, Cr, Mn, Mg, Ge, and combinations thereof.

32. The sealed device of claim 25, wherein the first inorganic film element concentration is at least about 5 mol % higher than the second inorganic film element concentration.

33. The sealed device of claim 25, wherein a first substrate element concentration of the weld region is higher than a second substrate element concentration of the inorganic film outside the weld region.

34. The sealed device of claim 33, wherein the at least one inorganic substrate element is chosen from Al, B, Si, Na, Li, K, Mg, Ca, Ba, and combinations thereof.

35. The sealed device of claim 33, wherein the first substrate element concentration is at least about 30 mol % higher than the second substrate element concentration.

36. The sealed device of claim 25, wherein the inorganic film has a thickness ranging from about 0.1 microns to about 10 microns.

37. The sealed device of claim 25, wherein the weld region has a thickness ranging from about 0.3 microns to about 14 microns.

38. The sealed device of claim 25, further comprising a stress region encompassing at least the weld region, wherein a first stress in the stress region is greater than a second stress outside of the stress region.

39. The sealed device of claim 38, wherein the first stress ranges from greater than about 1 MPa to about 25 MPa.

40. The sealed device of claim 38, wherein a ratio of the first stress to the second stress ranges from about 1.1:

1 to about 25;

1.

41. The sealed device of claim 38, wherein the stress region has a thickness ranging from about 20 microns to about 500 microns.

42. A sealed device comprising:

an inorganic film formed over a surface of a first substrate, the inorganic film comprising;

10-80 mol % B₂O_3,

5-60 mol % Bi₂O₃, and

0-70 mol % ZnO;

a second substrate in contact with the inorganic film; and

a weld region comprising a bond formed between the first and second substrates and extending from a first depth in the first substrate to a second depth in the second substrate;

wherein the inorganic film comprises at least one inorganic film element and wherein one or both of the first and second substrates comprises at least one inorganic substrate element; and

wherein a first substrate element concentration of the weld region is higher than a second substrate element concentration of the inorganic film outside the weld region.

43. A sealed device comprising:

an inorganic film formed over a surface of a first substrate, the inorganic film comprising;

10-80 mol % B₂O_3,

5-60 mol % Bi₂O₃, and

0-70 mol % ZnO₃;

a second substrate in contact with the inorganic film; and

a weld region comprising a bond formed between the first and second substrates;

wherein one or both of the first and second substrates comprises at least one inorganic substrate element; and

wherein the weld region is enriched with the at least one inorganic substrate element as compared to a portion of the inorganic film outside of the weld region.

44. The sealed device of claim 43, wherein the weld region comprises a first inorganic substrate element concentration at least 30 mol % greater than a second inorganic substrate element concentration in the portion of the inorganic film outside of the weld region.

45. A sealed device comprising:

an inorganic film formed over a surface of a first substrate, the inorganic film comprising;

10-80 mol % B₂O_3,

5-60 mol % Bi₂O₃, and

0-70 mol % ZnO;

a second substrate in contact with the inorganic film; and

a weld region comprising a bond formed between the first and second substrates;

wherein the inorganic film comprises at least one inorganic film element;

wherein the first substrate comprises a first portion in the weld region and a second portion outside of the weld region; and

wherein the first portion is enriched with the at least one inorganic film element as compared to the second portion.

46. The sealed device of claim 45, wherein the first portion comprises a first inorganic film element concentration at least 5 mol % greater than a second inorganic film element concentration in the second portion.

47. The sealed device of claim 45, wherein the first portion extends from a sealing interface into the first substrate to a depth ranging from about 0.1 μ

m to about 2 μ

m.

48. The sealed device of claim 45, wherein the second substrate comprises a third portion in the weld region and a fourth portion outside of the weld region, and wherein the third portion is enriched with the at least one inorganic film element as compared to the fourth portion.