MOSCAP-based circuitry for wireless communication devices, and methods of making and using the same
First Claim
1. A non-linear capacitor, comprising:
- a) a first electrode, comprising a printed doped polysilicon body having source and drain terminals electrically connected to a common node;
b) a dielectric layer in contact with the first electrode, andc) a second electrode spaced apart from the first electrode by the dielectric layer, comprising a printed doped polysilicon gate;
wherein said capacitor is configured to generate intermodulation components from (i) a main carrier signal from a first source at a first frequency of from 1 MHz to 10 GHz and a first power and (ii) a sub-carrier signal from a second source at a second frequency and a second power, the intermodulation components having different frequencies from the first frequency and substantially less power than the first power.
2 Assignments
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Accused Products
Abstract
A wireless (e.g., near field or RF) communication device, and methods of manufacturing and using the same are disclosed. The wireless communication device includes a receiver and/or transmitter, a substrate with an antenna thereon, an integrated circuit, and one or more continuity sensors. The antenna receives and/or backscatters a wireless signal. The integrated circuit processes the wireless signal and/or information therefrom, and/or generates the wireless signal and/or information therefor. The continuity sensor(s) are configured to sense or determine the presence of a chemical or substance in the package or container, and thus a continuity state of a package or container on which the communication device is placed or to which the communication device is fixed or adhered. The continuity sensor(s) are electrically connected to a set of terminals of the integrated circuit different from the set of terminals to which the antenna is electrically connected.
10 Citations
23 Claims
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1. A non-linear capacitor, comprising:
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a) a first electrode, comprising a printed doped polysilicon body having source and drain terminals electrically connected to a common node; b) a dielectric layer in contact with the first electrode, and c) a second electrode spaced apart from the first electrode by the dielectric layer, comprising a printed doped polysilicon gate; wherein said capacitor is configured to generate intermodulation components from (i) a main carrier signal from a first source at a first frequency of from 1 MHz to 10 GHz and a first power and (ii) a sub-carrier signal from a second source at a second frequency and a second power, the intermodulation components having different frequencies from the first frequency and substantially less power than the first power. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification