Switched-capacitor biosensor device

• US 9,746,442 B2
• Filed: 03/30/2014
• Issued: 08/29/2017
• Est. Priority Date: 03/30/2014
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Hekmatshoartabari, Bahman, Khakifirooz, Ali, Shahidi, Ghavam G., Shahrjerdi, Davood
• Primary Examiner(s): Kaur, Gurpreet
• Application Number:
  US14/229,967
• Publication Number:
  US 20150276653A1
• Time in Patent Office: 1,248 Days
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors

Abstract

A sensing apparatus includes a device containing microwells and a switched capacitor circuit in which at least one of the sensing/storage capacitors is a capacitor that extends perpendicularly with respect to a semiconductor device layer containing field effect transistors. Capacitor structures extend into microwells or within a doped layer on a handle substrate. Ion generation within the microwells is sensed using the circuit.

Claims

1. An apparatus comprising:

an electrically insulating layer;

a crystalline semiconductor layer adjoining a first side of the electrically insulating layer;

a handle substrate adjoining a second side of the electrically insulating layer;

one or more switched capacitor circuits, each of the one or more switched capacitor circuits including metal oxide semiconductor field effect transistors on the crystalline semiconductor layer, each of the transistors including source and drain regions;

a plurality of capacitor structures extending perpendicularly with respect to the crystalline semiconductor layer, each of the plurality of capacitor structures being electrically connected to a pair of the transistors, and

a plurality of microwells extending within the handle substrate, the plurality of capacitor structures extending within the plurality of microwells, the plurality of capacitor structures and the plurality of microwells being configured such that the one or more switched capacitor circuits are responsive to changes in ion concentration within one or more of the plurality of microwells.

2. The apparatus of claim 1, wherein each of the plurality of microwells contains a plurality of rod-like columns, each of the plurality of rod-like columns including an electrically conductive core and a dielectric layer on the electrically conductive core;

each of the plurality of capacitor structures being comprised of the plurality of rod-like columns contained, respectively, within each of the plurality of microwells.

3. The apparatus of claim 2, wherein, each of the plurality of microwells includes an opening and side walls that taper inwardly from the opening in the direction of the electrically insulating layer.

4. The apparatus of claim 2, wherein each of the plurality of microwells has a depth greater than the heights of the plurality of rod-like columns contained therein.

5. The apparatus of claim 4, wherein each electrically conductive core comprises n-type polysilicon.

6. The apparatus of claim 4, further including a sample solution containing ions within the plurality of microwells and adjoining the plurality of rod-like columns.

7. A method comprising:

obtaining an apparatus including;

an electrically insulating layer,

a crystalline semiconductor layer adjoining a first side of the electrically insulating layer,

a handle substrate adjoining a second side of the electrically insulating layer;

one or more switched capacitor circuits, each of the one or more switched capacitor circuits including metal oxide semiconductor field effect transistors on the crystalline semiconductor layer, each of the transistors including source and drain regions;

a plurality of capacitor structures extending perpendicularly with respect to the crystalline semiconductor layer, each of the plurality of capacitor structures being electrically connected to a pair of the transistors, and

a plurality of microwells extending within the handle substrate, the plurality of capacitor structures extending within the plurality of microwells, the plurality of capacitor structures and the plurality of microwells being configured such that the one or more switched capacitor circuits are responsive to changes in ion concentration within one or more of the plurality of microwells;

introducing one or more fluids into the plurality of microwells, and

detecting a change in ion concentration in the one or more fluids within the plurality of microwells using the one or more switched capacitor circuits.

8. The method of claim 7, wherein each of the plurality of capacitor structures includes an electrically conductive core and a dielectric coating over the core, each of the plurality of microwells having a depth greater than the heights of the plurality of capacitor structures, further including the steps of causing the one or more fluids to contact the dielectric coating of each of the plurality of capacitor structures and applying a DC bias to the one or more fluids within the plurality of microwells.

9. The method of claim 7, wherein each of the plurality of microwells contains a plurality of parallel rod-like columns, each of the plurality of parallel rod-like columns including an electrically conductive core and a dielectric layer on the electrically conductive core, each of the plurality of capacitor structures being comprised of the plurality of parallel rod-like columns contained, respectively, within each of the plurality of microwells;

further including causing the one or more fluids to contact the plurality of parallel columns in the plurality of microwells.

10. The method of claim 7, wherein each electrically conductive core comprises n-type polysilicon.

11. An apparatus comprising:

an electrically insulating layer;

a crystalline semiconductor layer adjoining a first side of the electrically insulating layer;

a doped semiconductor layer adjoining a second side of the electrically insulating layer;

one or more switched capacitor circuits, each of the one or more switched capacitor circuits including metal oxide semiconductor field effect transistors on the crystalline semiconductor layer, each of the transistors including source and drain regions;

a plurality of capacitor structures extending perpendicularly with respect to the crystalline semiconductor layer, each of the plurality of capacitor structures including a doped, electrically conductive core and a dielectric coating over the core, each of the plurality of capacitor structures extending into the doped semiconductor layer such that the dielectric coating directly contacts the doped semiconductor layer, each of the plurality of capacitor structures being electrically connected to a pair of the transistors;

a plurality of microwells, the plurality of capacitor structures and the plurality of microwells being configured such that the one or more switched capacitor circuits are responsive to changes in ion concentration within one or more of the plurality of microwells, and

electrical contacts respectively adjoining each of the plurality of microwells, each of the electrical contacts being electrically connected to the source region of one of the transistors.

12. The apparatus of claim 11, further including an operational amplifier and a feedback capacitor, wherein the operational amplifier, the feedback capacitor, a pair of the transistors, and one of the plurality of capacitor structures are configured as a parasitic sensitive integrator circuit.

13. The apparatus of claim 11, wherein the doped semiconductor layer and the doped, electrically conductive core of each of the plurality of capacitor structures have n-type conductivity.

14. The apparatus of claim 11, further including a top electrically insulating layer above the first side of the electrically insulating layer and above the crystalline semiconductor layer, the plurality of microwells extending into the top electrically insulating layer.

15. The apparatus of claim 11, wherein each of the plurality of capacitor structures has a diameter between 100 nm-1 μ

m.