Non-volatile memory with customized control of injection type of disturb during read operations
First Claim
1. A non-volatile storage apparatus, comprising:
- a plurality of non-volatile memory cells; and
one or more control circuits in communication with the memory cells, the one or more control circuits are configured to apply one or more signals to perform boosting of a channel region associated with an unselected memory cell, the one or more control circuits are configured to temporarily mitigate the boosting of the channel region while applying the one or more signals to perform boosting for a duration of time based on position of a selected memory cell, subsequent to the duration of time the boosting continues while applying the one or more signals to perform boosting, the one or more control circuits are configured to apply a compare signal to the selected memory cell and sense the selected memory cell in response to the compare signal after the mitigating the boosting.
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Abstract
A non-volatile memory system includes one or more control circuits configured to read memory cells. The reading of the programmed memory cells includes applying one or more voltages to perform boosting of a channel region associated with unselected memory cells, allowing the boosting of the channel region for a portion of time while applying the one or more voltages, preventing/interrupting the boosting of the channel region while applying the one or more voltages for a duration of time based on position of a memory cell selected for verification, applying a compare signal to the memory cell selected for reading, and performing a sensing operation for the memory cell selected for reading in response to the compare signal.
36 Citations
20 Claims
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1. A non-volatile storage apparatus, comprising:
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a plurality of non-volatile memory cells; and one or more control circuits in communication with the memory cells, the one or more control circuits are configured to apply one or more signals to perform boosting of a channel region associated with an unselected memory cell, the one or more control circuits are configured to temporarily mitigate the boosting of the channel region while applying the one or more signals to perform boosting for a duration of time based on position of a selected memory cell, subsequent to the duration of time the boosting continues while applying the one or more signals to perform boosting, the one or more control circuits are configured to apply a compare signal to the selected memory cell and sense the selected memory cell in response to the compare signal after the mitigating the boosting. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of reading non-volatile storage, comprising:
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applying a signal to one or more select gates for selected groups of memory cells to turn on the one or more select gates for selected groups of memory cells; applying a signal to one or more select gates for unselected selected groups of memory cells to turn off the one or more select gates for the unselected groups of memory cells; applying and increasing a signal to unselected control lines to boost channels of the unselected groups of memory cells, the unselected control lines are connected to the selected groups of memory cells and the unselected groups of memory cells; applying a signal to a selected control line connected to the selected groups of memory cells and the unselected groups of memory cells; sensing selected memory cells in the selected groups of memory cells in response to the signal applied to the selected control line; and while increasing the signal to unselected control lines to boost channels, temporarily changing the signal applied to the select gates for unselected groups of memory cells to temporarily turn on the select gates for the unselected groups of memory cells in order to prevent an increase in the boosting of the channels of the unselected groups of memory cells for a duration of time based on position of the selected control line with respect to a group of control lines that comprise the unselected control lines and the selected control line and subsequently turn off the select gates for the unselected groups of memory cells in order to continue increasing the boosting of the channels of the unselected groups of memory cells. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A non-volatile storage apparatus, comprising:
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a plurality of non-volatile memory cells; a plurality of select gates; a plurality of word lines connected to the memory cells; a plurality of select lines connected to the select gates; and means for sensing the non-volatile memory cells, the means for sensing is connected to the word lines and the select lines, the means for sensing includes means for reducing hot electron injection disturb based on selected word line position. - View Dependent Claims (20)
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Specification