Method of improving electromechanical integrity of cathode coating to cathode termination interfaces in solid electrolytic capacitors

• US 9,748,043 B2
• Filed: 08/06/2013
• Issued: 08/29/2017
• Est. Priority Date: 05/26/2010
• Status: Active Grant

• Current Assignee: Kemet Electronics Corporation (Yageo Corporation)
• Original Assignee: Kemet Electronics Corporation (Yageo Corporation)
• Inventors: Chacko, Antony P., McConnell, John E., Ramsbottom, Robert, Lessner, Philip M., Hahn, Randolph S., Bultitude, John
• Primary Examiner(s): Sinclair, David M
• Application Number:
  US13/959,995
• Publication Number:
  US 20130314845A1
• Time in Patent Office: 1,484 Days
• CPC Class Codes: H01G 11/26 characterised by their structure, e.g. multi-layered, porosity or surface features
• CPC Class Codes: H01G 9/0029 Processes of manufacture
• CPC Class Codes: H01G 9/012 specially adapted for solid capacitors
• CPC Class Codes: H01G 9/04 Electrodes or formation of dielectric layers thereon
• CPC Class Codes: H01G 9/0425 specially adapted for cathode
• CPC Class Codes: H01G 9/048 characterised by their structure H01G11/22 takes precedence

Abstract

A solid electrolytic capacitor is described which comprises an anode, a dielectric on the anode and a cathode on the dielectric. A conductive coating is on the cathode wherein the conductive layer comprises an exterior surface of a first high melting point metal. An adjacent layer is provided comprising a second high melting point metal, wherein the first high melting point metal and the second high melting point metal are metallurgically bonded with a low melting point metal.

Claims

1. A solid electrolytic capacitor comprising:

an anode;

a dielectric on said anode;

a cathode on said dielectric;

a plated metal layer on said cathode wherein said plated metal layer comprises an exterior surface of a first high melting point metal; and

an adjacent layer selected from a circuit trace and a lead wherein said adjacent layer comprises a second plated metal layer comprising a second high melting point metal wherein said first high melting point metal and said second high melting point metal are directly metallurgically bonded as an alloy with a low melting point metal.

2. The solid electrolytic capacitor of claim 1 wherein said first high melting point metal and said second melting point metal are the same.

3. The solid electrolytic capacitor of claim 1 wherein at least one of said first high melting point metal or said second melting point metal is selected from the group consisting of copper, silver, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum or an alloy thereof.

4. The solid electrolytic capacitor of claim 3 wherein at least one of said first high melting point metal or said second melting point metal is selected from the group consisting of nickel, copper, gold, silver, tin, palladium and lead.

5. The solid electrolytic capacitor of claim 4 wherein said cathode is plated with metal.

6. The solid electrolytic capacitor of claim 1 wherein said low melting point metal is selected from the group consisting of tin, antimony, bismuth, cadmium, zinc, gallium, indium, tellurium, mercury, thallium, selenium and polonium or an alloy thereof.

7. The solid electrolytic capacitor of claim 6 wherein said low melting point metal is selected from the group consisting of tin, antimony and indium.

8. The solid electrolytic capacitor of claim 1 where said cathode comprises a conductive polymer.

9. The solid electrolytic capacitor of claim 8 wherein said conductive polymer is selected from the group consisting of polyaniline, polythiophene and polypyrrole.

10. The solid electrolytic capacitor of claim 9 wherein said conductive polymer is polyethylene dioxythiophene.

11. The solid electrolytic capacitor of claim 1 wherein said cathode further comprises a conductive coating further comprising a conductive particle.

12. The solid electrolytic capacitor of claim 11 wherein said conductive particle is selected from the group consisting of carbon black, graphite, graphene, carbon nanotubes, metal particles, carbon coated metal particles and metal coated carbon particles.

13. The solid electrolytic capacitor of claim 12 wherein said metal particles are selected from the group consisting of Ag, Cu, Ni, Sn, In, Bi, Sb, Au and Pd.

14. The solid electrolytic capacitor of claim 12 wherein said conductive particle comprise a metal coating selected from a high melting point metal and a low melting point metal.

15. The solid electrolytic capacitor of claim 1 wherein said adjacent layer is selected from a cathode lead, a mounting tab and an adjacent electrode.

16. The solid electrolytic capacitor of claim 15 wherein said cathode lead is a non-ferrous material or a ferrous material.

17. The solid electrolytic capacitor of claim 16 wherein said non-ferrous material is selected from copper, phosphor bronze, brass and beryllium copper.

18. The solid electrolytic capacitor of claim 1 wherein said low melting point metal is a single component.

19. A method for forming a capacitor comprising the steps of:

providing an anode;

forming a dielectric on said anode;

applying a cathode on said dielectric;

plating a first high melting point metal on said cathode;

plating a second high melting point metal on a circuit trace, a cathode lead, a mounting tab or an adjacent cathode; and

forming a direct metallurgical bond between said first high melting point metal and said second high melting point metal as an alloy with a low melting point metal.

20. The method for forming a capacitor of claim 19 wherein said first high melting point metal and said second high melting point metal are the same.

21. The method for forming a capacitor of claim 19 wherein said first high melting point metal or said second high melting point metal is selected from the group consisting of copper, silver, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum or an alloy thereof.

22. The method for forming a capacitor of claim 21 wherein said first high melting point metal or said second high melting point metal is selected from the group consisting of nickel, copper, gold, silver, tin, palladium and lead.

23. The method for forming a capacitor of claim 19 wherein said low melting point metal is selected from the group consisting of tin, antimony, bismuth, cadmium, zinc, gallium, indium, tellurium, mercury, thallium, selenium and polonium or an alloy thereof.

24. The method for forming a capacitor of claim 23 wherein said low melting point metal is selected from the group consisting of tin, antimony and indium.

25. The method for forming a capacitor of claim 19 further comprising forming a coupon comprising said low melting point metal.

26. The method for forming a capacitor of claim 25 wherein said forming of said metallurgical bond between said high melting point metal and said adjacent layer comprises placing said coupon between said high melting point metal and said second high melting point metal.

27. The method for forming a capacitor of claim 19 wherein said cathode comprises a conductive polymer.

28. The method for forming a capacitor of claim 27 wherein said conductive polymer is selected from the group consisting of polyaniline, polythiophene and polypyrrole.

29. The method for forming a capacitor of claim 28 wherein said conductive polymer is polyethylene dioxythiophene.

30. The method for forming a capacitor of claim 19 wherein one of said first high melting point metal or said second high melting point metal is plated with said low melting point metal.

31. The method for forming a capacitor of claim 19 wherein said cathode lead is a metal or alloys with melting point above 300°

C.

32. The method for forming a capacitor of claim 19 wherein said cathode lead is a non-ferrous material or a ferrous material.

33. The method for forming a capacitor of claim 32 wherein said non-ferrous material is selected from the group consisting of copper, phosphor bronze, brass and beryllium copper.

34. The method for forming a capacitor of claim 19 wherein said low melting point metal is a single component.

35. A capacitor stack comprising:

at least two solid electrolytic capacitors with each solid electrolytic capacitor of said electrolytic capacitors comprising;

an anode;

a dielectric on said anode;

a cathode on said dielectric; and

a conductive coating plated on said cathode wherein said conductive coating comprises an exterior surface of a first high melting point metal; and

an adjacent layer selected from a circuit trace and a lead wherein said adjacent layer comprises a second high melting point metal plated on said adjacent layer wherein said first high melting point metal and said second high melting point metal are metallurgically bonded as bridges of alloy with a low melting point metal there between.

36. The capacitor of claim 35 wherein at least one of said first high melting point metal or said second high melting point metal is selected from the group consisting of copper, silver, aluminum, gold, platinum, palladium, beryllium, rhodium, nickel, cobalt, iron and molybdenum or an alloy thereof.

37. The capacitor of claim 36 wherein at least one of said first high melting point metal or said second high melting point metal is selected from the group consisting of nickel, copper, gold, silver, tin, palladium and lead.

38. The capacitor of claim 35 wherein said low melting point metal is selected from the group consisting of tin, antimony, bismuth, cadmium, zinc, gallium, indium, tellurium, mercury, thallium, selenium and polonium or an alloy thereof.

39. The capacitor of claim 38 wherein said low melting point metal is selected from the group consisting of tin, antimony and indium.

40. The capacitor of claim 35 where said cathode comprises a conductive polymer.

41. The capacitor of claim 40 wherein said conductive polymer is selected from the group consisting of polyaniline, polythiophene and polypyrrole.

42. The capacitor of claim 41 wherein said conductive polymer is polyethylene dioxythiophene.

43. The capacitor of claim 35 wherein said adjacent layer is selected from a cathode lead a mounting tab and an adjacent cathode.

44. The capacitor of claim 43 wherein said cathode lead is a non-ferrous material or a ferrous material.

45. The capacitor of claim 44 wherein said non-ferrous material is selected from the group consisting of copper, phosphor bronze, brass and beryllium copper.

46. The capacitor of claim 35 wherein said low melting point metal is a single component.