Method for fabricating semiconductor package

• US 9,748,106 B2
• Filed: 01/21/2016
• Issued: 08/29/2017
• Est. Priority Date: 01/21/2016
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Lo, Yi-Jen, Shih, Neng-Tai
• Primary Examiner(s): Graybill, David E
• Application Number:
  US15/002,405
• Publication Number:
  US 20170213740A1
• Time in Patent Office: 586 Days
• Field of Search: None
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/11 Manufacturing methods

Abstract

A method for fabricating a semiconductor package, the method includes forming at least one conductive via having a first end and a second end opposite the first end in a wafer, in which the wafer has a first surface and a second surface opposite the first surface, and the first end of the at least one conductive via is exposed of the first surface of the wafer; grinding the second surface of the wafer to form an inner portion and a ring portion surrounding the inner portion of the wafer, wherein the inner portion has a thinner thickness than that of the ring portion; and etching the inner portion to expose the second end of the at least one conductive via.

Claims

1. A method for fabricating a semiconductor package, comprising:

forming at least one conductive via in a wafer, wherein the wafer comprises a silicon substrate, a top silicon layer, and a buried dielectric layer disposed between the silicon substrate and the top silicon layer, wherein the top silicon layer is in contact with the buried dielectric layer, and the at least one conductive via extends through the top silicon layer and the buried dielectric layer;

grinding a surface of the silicon substrate of the wafer opposite the buried dielectric layer to form an inner portion and a ring portion surrounding the inner portion of the wafer, wherein the inner portion has a thinner thickness than a thickness of the ring portion; and

etching the inner portion to expose an end of the at least one conductive via.

2. The method of claim 1, wherein the at least one conductive via further extends to a portion of the silicon substrate before the grinding.

3. The method of claim 1, wherein the etching the inner portion comprises:

etching a remaining portion of the silicon substrate, wherein the buried dielectric layer is an etch stop layer.

4. The method of claim 1, wherein the buried dielectric layer is made of silicon dioxide.

5. The method of claim 1, wherein the at least one conductive via comprises a conductive column and an insulation layer surrounding the conductive column, wherein the method further comprises:

etching the insulation layer of the at least one conductive via after the etching the inner portion.

6. The method of claim 5, wherein the insulation layer of the at least one conductive via has a thinner thickness than a thickness of the buried dielectric layer of the wafer.

7. The method of claim 5, wherein the insulation layer and the buried dielectric layer are both made of silicon dioxide.

8. The method of claim 5, wherein the etching the inner portion of the wafer and the etching the insulation layer of the at least one conductive via are performed by wet etching.

9. The method of claim 5, wherein the etching the inner portion of the wafer is performed with a first etch solution, and the etching the insulation layer of the at least one conductive via is performed with a second etch solution, and the first etch solution is different from the second etch solution.

10. The method of claim 1, further comprising:

forming a patterned metal layer on a surface of the top silicon layer opposite the buried dielectric layer, wherein the patterned metal layer is electrically connected to the at least one conductive via.

11. The method of claim 1, further comprising:

forming a solder bump on a surface of the top silicon layer opposite the buried dielectric layer, wherein the solder bump is electrically connected to the at least one conductive via.

12. The method of claim 11, wherein the ground surface of the silicon substrate is etched in the etching the inner portion, and the method further comprises:

forming at least one solder ball on an etched surface of the inner portion, wherein the solder ball is electrically connected to the at least one conductive via.

13. The method of claim 12, further comprising:

bonding at least one package component with the surface of the top silicon layer, wherein the package component is electrically connected to the at least one conductive via through the solder bump.

14. The method of claim 13, further comprising:

removing the ring portion from the wafer; and

chipping the wafer into a plurality of micro-devices, wherein each of the micro-devices comprises the package component and the solder ball.

15. The method of claim 14, further comprising:

bonding at least one of the micro-devices and a substrate through the solder ball.

16. The method of claim 1, wherein the at least one conductive via is disposed in the inner portion of the wafer.

17. The method of claim 1, wherein the at least one conductive via is made by laser drilling, etching, deposition, or combinations thereof.

18. The method of claim 1, wherein the thickness of the inner portion is in a range from 30 micrometers to 200 micrometers, and the thickness of the ring portion is in a range from 300 micrometers to 800 micrometers.

19. The method of claim 1, wherein the wafer is a silicon-on-insulator (SOI) wafer.