Semiconductor device and method for fabricating the same
First Claim
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1. A semiconductor device, containing:
- a substrate;
a first gate structure on the substrate;
a first spacer adjacent to the first gate structure;
a first contact plug adjacent to the first gate structure and contact the first spacer directly; and
a silicon layer around the first gate structure, wherein the first contact plug and the silicon layer comprise different material.
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon; forming a silicon layer on the substrate to cover the gate structure entirely; planarizing the silicon layer; and performing a replacement metal gate (RMG) process to transform the gate structure into a metal gate.
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Citations
6 Claims
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1. A semiconductor device, containing:
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a substrate; a first gate structure on the substrate; a first spacer adjacent to the first gate structure; a first contact plug adjacent to the first gate structure and contact the first spacer directly; and a silicon layer around the first gate structure, wherein the first contact plug and the silicon layer comprise different material. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification