Light absorption apparatus
First Claim
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1. A method of forming a light absorption apparatus, the method comprising:
- doping a surface of a substrate to form a doped layer in the substrate; and
forming, atop the doped layer, a photosensitive structure that includes (1) a counter doping layer at or near the bottom of the photosensitive structure; and
(2) a dopant control layer atop the counter doping layer, wherein the dopant control layer has a material that retards dopant diffusion from the counter doping layer into an intrinsic layer in the photosensitive structure, and wherein the substrate is silicon based, and wherein both the counter doping layer and the intrinsic layer is germanium based.
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Abstract
A light absorption apparatus includes a substrate, a light absorption layer above the substrate on a first selected area, a silicon layer above the light absorption layer, a spacer surrounding at least part of the sidewall of the light absorption layer, an isolation layer surrounding at least part of the spacer, wherein the light absorption apparatus can achieve high bandwidth and low dark current.
21 Citations
20 Claims
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1. A method of forming a light absorption apparatus, the method comprising:
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doping a surface of a substrate to form a doped layer in the substrate; and forming, atop the doped layer, a photosensitive structure that includes (1) a counter doping layer at or near the bottom of the photosensitive structure; and
(2) a dopant control layer atop the counter doping layer, wherein the dopant control layer has a material that retards dopant diffusion from the counter doping layer into an intrinsic layer in the photosensitive structure, and wherein the substrate is silicon based, and wherein both the counter doping layer and the intrinsic layer is germanium based. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light absorption apparatus comprising:
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a substrate having a doped layer; and a photosensitive structure atop the doped layer, the photosensitive structure including (1) a counter doping layer at or near the bottom of the photosensitive structure; and
(2) a dopant control layer atop the counter doping layer, wherein the dopant control layer has a material that retards dopant diffusion from the counter doping layer into an intrinsic layer in the photosensitive structure,wherein the substrate is silicon based, and wherein both the counter doping layer and the intrinsic layer is germanium based. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification