Structure of integrated inductor

• US 9,748,326 B2
• Filed: 05/22/2015
• Issued: 08/29/2017
• Est. Priority Date: 10/06/2014
• Status: Active Grant

• Current Assignee: Realtek Semiconductor Corp.
• Original Assignee: Realtek Semiconductor Corp.
• Inventors: Yen, Hsiao-Tsung, Jean, Yuh-Sheng, Yeh, Ta-Hsun
• Primary Examiner(s): NGO, NGAN V
• Application Number:
  US14/720,301
• Publication Number:
  US 20160099301A1
• Time in Patent Office: 830 Days
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 2027/2809 on stacked layers
• CPC Class Codes: H01F 27/2804 Printed windings
• CPC Class Codes: H01L 2224/16148 the bump connector connecting to a bonding area protruding from the surface
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/16 of an individual bump connector
• CPC Class Codes: H01L 25/065 the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/14211 Voltage-controlled oscillator [VCO]
• CPC Class Codes: H01L 2924/19011 including integrated passive components
• CPC Class Codes: H01L 2924/19042 being an inductor
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

This invention discloses a structure of an integrated inductor, comprising: an outer metal segment which comprises a first metal sub-segment and a second metal sub-segment; an inner metal segment which is arranged inside an area surrounded by the outer metal segment and comprises a third metal sub-segment and a fourth metal sub-segment; and at least a connecting structure for connecting the outer metal segment and the inner metal segment. The first metal sub-segment corresponds to the third metal sub-segment, and the first metal sub-segment and the third metal sub-segment belong to different metal layers in a semiconductor structure. The second metal sub-segment corresponds to the fourth metal sub-segment, and the second metal sub-segment and the fourth metal sub-segment belong to different metal layers in a semiconductor structure.

Claims

1. An integrated inductor structure, comprising:

an outer metal segment;

an inner metal segment in an area surrounded by the outer metal segment;

at least a bridging metal segment for connecting the outer metal segment and the inner metal segment; and

at least a connecting structure for connecting the bridging metal segment and the outer metal segment or the inner metal segment;

wherein, the outer metal segment and the inner metal segment are on different metal layers of a semiconductor structure;

wherein the outer metal segment comprises;

a first metal segment connecting a first bridging metal segment through a first connecting structure; and

a second metal segment connecting a second bridging metal segment;

wherein, the first bridging metal segment connects the inner metal segment and the second bridging metal segment connects the inner metal segment through a second connecting structure.

2. The integrated inductor structure of claim 1, wherein a thickness of a metal layer of the outer metal segment is smaller than a thickness of a metal layer of the inner metal segment.

3. The integrated inductor structure of claim 1, wherein the outer metal segment and the inner metal segment belong to different dies and the connecting structure is a micro bump.

4. The integrated inductor structure of claim 1, wherein the outer metal segment is in a first oxide layer, the inner metal segment is in a second oxide layer, a silicon layer is disposed between the first oxide layer and the second oxide layer, and the connecting structure is a through-silicon via.

5. The integrated inductor structure of claim 4, wherein the first oxide layer, the silicon layer and the second oxide layer form a die and the first oxide layer and the second oxide layer are the front side and the back side of the die, respectively.

6. The integrated inductor structure of claim 1 being a symmetric spiral inductor structure.

7. An integrated inductor structure, comprising:

an outer metal segment;

an inner metal segment in an area surrounded by the outer metal segment;

at least a bridging metal segment for connecting the outer metal segment and the inner metal segment; and

at least a connecting structure for connecting the bridging metal segment and the outer metal segment or the inner metal segment;

wherein, the outer metal segment and the inner metal segment are on different metal layers of a semiconductor structure;

wherein, the outer metal segment is in a first oxide layer, the inner metal segment is in a second oxide layer, a silicon layer is disposed between the first oxide layer and the second oxide layer, and the connecting structure is a through-silicon via;

wherein, the first oxide layer, the silicon layer and the second oxide layer form a die and the first oxide layer and the second oxide layer are the front side and the back side of the die, respectively.

8. The integrated inductor structure of claim 7, wherein a thickness of a metal layer of the outer metal segment is smaller than a thickness of a metal layer of the inner metal segment.

9. The integrated inductor structure of claim 7, wherein the outer metal segment and the inner metal segment belong to different dies and the connecting structure is a micro bump.

10. The integrated inductor structure of claim 7 being a symmetric spiral inductor structure.