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Tunnel field-effect transistor (TFET) with supersteep sub-threshold swing

  • US 9,748,368 B2
  • Filed: 08/23/2013
  • Issued: 08/29/2017
  • Est. Priority Date: 07/03/2013
  • Status: Expired due to Fees
First Claim
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1. A tunnel field-effect transistor (FET) device, comprising:

  • a bulk silicon substrate;

    a p-i-n tunnel structure formed within the bulk silicon substrate, the p-i-n tunnel structure comprising a source region of a first type, a drain region of a second type, and a channel region of the bulk silicon substrate between the drain region and the source region, wherein the drain region comprises silicon or silicon-germanium doped with dopants of the second type, and wherein the bulk silicon substrate comprises silicon or silicon-germanium doped with dopants of either the first type the second type;

    a gate electrode separated from the p-i-n tunnel structure through a gate dielectric, wherein the gate dielectric is positioned partially over the source region and partially over the channel region;

    a source electrode;

    a drain electrode;

    a first side-wall spacer material arranged to interface with each of a first portion of the source region and a portion of the source electrode; and

    a second side-wall spacer material arranged to interface with each of a stepped top portion of the channel region, a portion of the drain region, and a portion of the drain electrode.

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