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Field effect transistor with narrow bandgap source and drain regions and method of fabrication

  • US 9,748,391 B2
  • Filed: 02/24/2017
  • Issued: 08/29/2017
  • Est. Priority Date: 02/23/2005
  • Status: Active Grant
First Claim
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1. A transistor comprising:

  • a gate dielectric layer formed over a substrate;

    a gate electrode formed on the gate dielectric layer; and

    a pair of source/drain regions on opposite sides of the gate electrode, the pair of source/drain regions comprising a doped semiconductor film that extends directly beneath the gate electrode, wherein the semiconductor film comprises a material selected from the group consisting of InSb, InAs, InP and InGaAs; and

    wherein the semiconductor film is doped to a p type conductivity with a carbon (C), a cadmium (Cd), a zinc (Zn), or a chromium (Cr) dopant.

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