Solar cell and method for producing same

• US 9,748,418 B2
• Filed: 05/25/2012
• Issued: 08/29/2017
• Est. Priority Date: 05/27/2011
• Status: Active Grant

• Current Assignee: Rec Solar Pte. Ltd. (Reliance New Energy Ltd.)
• Original Assignee: Rec Solar Pte. Ltd. (Reliance New Energy Ltd.)
• Inventors: Kirkengen, Martin, Sauar, Erik
• Primary Examiner(s): BARTON, JEFFREY THOMAS
• Assistant Examiner(s): Sun, Michael Y
• Application Number:
  US14/122,625
• Publication Number:
  US 20140096819A1
• Time in Patent Office: 1,922 Days
• CPC Class Codes: H01L 31/022441 Electrode arrangements specially adapted for back-contact solar cells
• CPC Class Codes: H01L 31/074 comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
• CPC Class Codes: H01L 31/0747 comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells

Abstract

A rear contact heterojunction solar cell and a fabricating method. The solar cell comprises a silicon substrate having a passivating layer and an intrinsic amorphous silicon layer. At a back side of the intrinsic amorphous silicon layer, an emitter layer and a base layer are provided. Interposed between these emitter and base layers is a separation layer comprising an electrically insulating material. This separation layer as well as the base layer and emitter layer may be generated by vapor deposition. Due to such processing, adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer partially laterally overlap in overlapping areas in such a way that at least a part of the separating layer is located closer to the substrate than an overlapping portion of the respective one of the emitter layer and the base layer.

Claims

1. A rear contacted heterojunction intrinsic thin layer solar cell comprising:

a silicon substrate with a front surface and a rear surface;

a passivating layer at the front surface of the silicon substrate;

a continuous thin intrinsic amorphous silicon layer covering the entire rear surface of the substrate, the intrinsic amorphous silicon layer having a front surface adjacent to the rear surface of the silicon substrate and the intrinsic amorphous silicon layer having a back surface opposite to the front surface of the intrinsic amorphous silicon layer;

an emitter layer comprising a doped semiconducting material of a first doping polarity and covering one or more portions of the back surface of the intrinsic amorphous silicon layer;

a base layer comprising a doped semiconducting material of a second doping polarity opposite to the first doping polarity and with higher doping concentration than the silicon substrate and covering one or more portions of the back surface of the intrinsic amorphous silicon layer neighboring the portion covered by the emitter layer;

a separating layer comprising an electrically insulating material and being arranged on one or more portions of the back surface of the intrinsic amorphous silicon layer laterally between neighboring portions of the emitter layer and portions of the base layer;

wherein

adjacent regions of the emitter layer and the separating layer and adjacent regions of the base layer and the separating layer are partially laterally overlapping in such a way that, in an overlapping area, at least a portion of the separating layer is located closer to the substrate than an overlapping portion of a respective one of the emitter layer and the base layer, and that the separating layer comprises a first portion that is arranged between the silicon substrate and the base layer and a second portion that is arranged between the silicon substrate and the emitter layer.

2. The solar cell of claim 1, wherein a normal originating from an outside facing surface of the separating layer has a direction component facing away from the intrinsic amorphous silicon layer for all locations of the surface of the separating layer not being in direct contact with the intrinsic amorphous silicon layer.

3. The solar cell of one of claim 1, wherein at least a part of the separating layer forms a continuous phase with the intrinsic amorphous silicon layer thereby forming a combination intrinsic amorphous layer and wherein a cross section of the solar cell shows that the combination intrinsic amorphous silicon layer is thinnest under a middle of electrodes contacting one of the emitter layer and the base layer and is at least 20% thicker towards at least one of electrode edges and in the majority of the separating layer.

4. The solar cell of one of claim 1, wherein the separating layer comprises at least one layer of a dielectric material with good passivating and electrical insulation properties.

5. The solar cell of claim 1, wherein the separating layer consists of one layer of intrinsic amorphous silicon with good passivating properties and at least one layer of dielectric with good optical reflection and electrical insulation properties, and wherein a tail portion of the intrinsic amorphous silicon of the separating layer extends under and laterally overlaps with one of the adjacent base layer or emitter layer.

6. The solar cell of claim 1, where the substrate is a silicon wafer cut in a crystal orientation and being polished at the rear surface.

7. The solar cell of claim 1, wherein the rear surface of the silicon substrate has a texture.