Semiconductor device and method for manufacturing the same

• US 9,748,436 B2
• Filed: 05/22/2013
• Issued: 08/29/2017
• Est. Priority Date: 11/27/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Hosoba, Miyuki, Hiraishi, Suzunosuke
• Primary Examiner(s): HOANG, QUOC DINH
• Application Number:
  US13/899,736
• Publication Number:
  US 20130248854A1
• Time in Patent Office: 1,560 Days
• Field of Search: 257 59, 257 72, 438149
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0041 characterised by field-effect operation
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs

Abstract

Disclosed is a semiconductor device comprising a thin film transistor and wirings connected to the thin film transistor, in which the thin film transistor has a channel formation region in an oxide semiconductor layer, and a copper metal is used for at least one of a gate electrode, a source electrode, a drain electrode, a gate wiring, a source wiring, and a drain wiring. The extremely low off current of the transistor with the oxide semiconductor layer contributes to reduction in power consumption of the semiconductor device. Additionally, the use of the copper metal allows the combination of the semiconductor device with a display element to provide a display device with high display quality and negligible defects, which results from the low electrical resistance of the wirings and electrodes formed with the copper metal.

Claims

1. A display device comprising:

a gate electrode over a substrate;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a first insulating layer over and in contact with the oxide semiconductor layer, the first insulating layer comprising silicon oxide; and

a source electrode and a drain electrode over the first insulating layer,

wherein the gate electrode comprises;

a first layer comprising a metal selected from Cr, Ta, Ti, Mo, and W; and

a second layer comprising Cu, and

wherein the gate insulating layer comprises a stack of a silicon nitride layer and a silicon oxide layer.

2. The display device according to claim 1, wherein the silicon oxide layer is located over the silicon nitride layer.

3. The display device according to claim 1, wherein the metal is W.

4. The display device according to claim 1, wherein the source electrode and the drain electrode each comprise:

a third layer comprising a metal selected from Cr, Ta, Ti, Mo, and W; and

a fourth layer comprising Cu.

5. The display device according to claim 4, wherein the metal included in the third layer is W.

6. The display device according to claim 4, wherein the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen.

7. The display device according to claim 1, further comprising a liquid crystal element electrically connected to one of the source electrode and the drain electrode.

8. A module comprising the display device according to claim 1,

wherein a connector is attached to the display device,

wherein the connector is selected from a flexible printed circuit, a tape automated bonding tape, a tape carrier package.

9. The module according to claim 8, further comprising an integrated circuit.

10. An electronic device comprising the module according to claim 8.

11. A display device comprising:

a gate electrode over a substrate;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a first insulating layer over and in contact with the oxide semiconductor layer, the first insulating layer comprising silicon oxide; and

a source electrode and a drain electrode over the first insulating layer,

wherein the gate electrode comprises;

a first layer comprising two metal elements selected from Cr, Ta, Ti, Mo, and W; and

a second layer comprising Cu, and

wherein the gate insulating layer comprises a stack of a silicon nitride layer and a silicon oxide layer.

12. The display device according to claim 11, wherein the silicon oxide layer is located over the silicon nitride layer.

13. The display device according to claim 11, wherein the first layer comprises Ti and Mo.

14. The display device according to claim 11, wherein the first layer comprises an alloy of Ti and Mo.

15. The display device according to claim 11, wherein the second layer is located over the first layer.

16. The display device according to claim 11, wherein the source electrode and the drain electrode each comprise:

a third layer comprising two metal elements selected from Cr, Ta, Ti, Mo, and W; and

a fourth layer comprising Cu.

17. The display device according to claim 16, wherein the third layer comprises Ti and Mo.

18. The display device according to claim 16, wherein the third layer comprises an alloy including Ti and Mo.

19. The display device according to claim 16, wherein the fourth layer is located over the third layer.

20. The display device according to claim 16, wherein the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen.

21. The display device according to claim 11, further comprising:

a second insulating layer over and in contact with the source electrode, the drain electrode, and the first insulating layer, and

a second gate electrode over and in contact with the second insulating layer.

22. The display device according to claim 21, wherein the second gate electrode comprises:

a fifth layer comprising two metal elements selected from Cr, Ta, Ti, Mo, and W; and

a sixth layer comprising Cu.

23. The display device according to claim 22, wherein the fifth layer comprises Ti and Mo.

24. The display device according to claim 22, wherein the fifth layer comprises an alloy of Ti and Mo.

25. The display device according to claim 22, wherein the sixth layer is located over the fifth layer.

26. The display device according to claim 11, further comprising a light-emitting element electrically connected to one of the source electrode and the drain electrode.

27. A module comprising the display device according to claim 11,

wherein a connector is attached to the display device,

wherein the connector is selected from a flexible printed circuit, a tape automated bonding tape, a tape carrier package.

28. The module according to claim 27, further comprising an integrated circuit.

29. An electronic device comprising the module according to claim 27.

30. A display device comprising:

a gate electrode over a substrate;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a source electrode and a drain electrode over the oxide semiconductor layer; and

a first insulating layer over and in contact with the source electrode, the drain electrode, and the oxide semiconductor layer;

wherein the gate insulating layer comprises a stack of a first silicon nitride layer and a first silicon oxide layer, and

wherein the first insulating layer comprises a second silicon oxide layer and a second silicon nitride layer.

31. The display device according to claim 30, wherein the first silicon oxide layer is located over the first silicon nitride layer.

32. The display device according to claim 30, wherein the second silicon nitride layer is located over the second silicon oxide layer.

33. The display device according to claim 30, wherein the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen.

34. The display device according to claim 30, further comprising a liquid crystal element electrically connected to one of the source electrode and the drain electrode.

35. A module comprising the display device according to claim 30,

wherein a connector is attached to the display device,

wherein the connector is selected from a flexible printed circuit, a tape automated bonding tape, a tape carrier package.

36. The module according to claim 35, further comprising an integrated circuit.

37. An electronic device comprising the module according to claim 35.

38. A display device comprising:

a gate electrode over a substrate;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a first insulating layer over and in contact with the oxide semiconductor layer, the first insulating layer comprising silicon oxide; and

a source electrode and a drain electrode over the first insulating layer,

wherein the gate electrode comprises;

a first layer comprising a metal selected from Cr, Ta, Ti, Mo, and W; and

a second layer comprising Cu.

39. The display device according to claim 38, wherein the silicon oxide layer is located over the silicon nitride layer.

40. The display device according to claim 38, wherein the metal is W.

41. The display device according to claim 38, wherein the source electrode and the drain electrode each comprise:

a third layer comprising a metal selected from Cr, Ta, Ti, Mo, and W; and

a fourth layer comprising Cu.

42. The display device according to claim 41, wherein the metal included in the third layer is W.

43. The display device according to claim 41, wherein the oxide semiconductor layer comprises indium, gallium, zinc, and oxygen.

44. The display device according to claim 38, further comprising a liquid crystal element electrically connected to one of the source electrode and the drain electrode.

45. A module comprising the display device according to claim 38,

wherein a connector is attached to the display device,

wherein the connector is selected from a flexible printed circuit, a tape automated bonding tape, a tape carrier package.

46. The module according to claim 45, further comprising an integrated circuit.

47. An electronic device comprising the module according to claim 45.

48. A display device comprising:

a gate electrode, the gate electrode comprising Cu;

a first insulating layer over the gate electrode, the first insulating layer comprising silicon and nitrogen;

a second insulating layer over the first insulating layer, the second insulating layer comprising silicon and oxygen;

an oxide semiconductor layer over and in contact with the second insulating layer, the oxide semiconductor layer comprising indium, gallium, and zinc;

a source electrode and a drain electrode over the oxide semiconductor layer, the source electrode and the drain electrode each comprising Cu;

a third insulating layer over and in contact with the oxide semiconductor layer, the third insulating layer comprising silicon and oxygen; and

a fourth insulating layer over the third insulating layer, the fourth insulating layer comprising silicon and nitrogen,

wherein a superficial portion of the oxide semiconductor layer comprises a crystal region.

49. The display device according to claim 48, wherein the gate electrode comprises:

a first layer comprising Ti; and

a second layer over the first layer and comprising Cu.

50. The display device according to claim 48, wherein the source electrode and the drain electrode each comprises:

a first layer over and in contact with the oxide semiconductor layer and comprising Ti; and

a second layer over the first layer and comprising Cu.

51. The display device according to claim 48, wherein the second insulating layer is in contact with the first insulating layer.

52. The display device according to claim 48, wherein the fourth insulating layer is in contact with the third insulating layer.

53. The display device according to claim 48, wherein the crystal region comprises a nanocrystal.

54. The display device according to claim 48, wherein the oxide semiconductor layer comprises an amorphous region.

55. The display device according to claim 48, wherein the oxide semiconductor layer comprises a region in which an amorphous region is dotted with microcrystals.

56. The display device according to claim 48, wherein the third insulating layer is over the source electrode and the drain electrode.

57. The display device according to claim 48, wherein the source electrode and the drain electrode are each over the third insulating layer.