Semiconductor light emitting device

• US 9,748,446 B2
• Filed: 10/13/2014
• Issued: 08/29/2017
• Est. Priority Date: 10/11/2013
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: Jeon, Soo Kun, Jin, Geun Mo
• Primary Examiner(s): YUSHIN, NIKOLAY K
• Application Number:
  US15/028,653
• Publication Number:
  US 20160260869A1
• Time in Patent Office: 1,051 Days
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers grown sequentially on a growth substrate; a first electrode part, which is in electrical communication with the first semiconductor layer and supplies one of electrons or holes thereto; a second electrode part, which is in electrical communication with the second semiconductor layer and supplies the other one of electrons or holes thereto; and a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein, wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening; an upper electrode provided on the non-conductive reflective film; and an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode.

Claims

1. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode, and

wherein the opening is formed, passing through the second semiconductor layer, the active layer and until reaching down to part of the first semiconductor layer, and the lower electrode comes in contact with an exposed part of the first semiconductor layer and with the electrical connection, respectively.

2. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode, and

wherein the lower electrode comprises;

a contact layer for lowering an electrical contact resistance with the plurality of semiconductor layers;

a reflective layer provided on the contact layer;

a diffusion barrier layer provided on the reflective layer;

an anti-oxidation layer provided on the diffusion barrier layer; and

an anti-etching layer provided on the anti-oxidation layer, wherein the anti-etching layer in correspondence to the opening is removed to allow the electrical connection to come into contact with the anti-oxidation layer.

3. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode, and

wherein the lower electrode comprises at least one of the following;

a finger electrode long stretched above the plurality of semiconductor layers; and

an island-like ohmic contact pad.

4. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode, and

wherein a face of the non-conductive reflective film formed by the opening is slanted.

5. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode, and

wherein the upper electrode comprises;

a Sn-containing soldering layer; and

an anti-oxidation layer formed on the soldering layer, the anti-oxidation layer being formed of at least one of Au and Pt.

6. The semiconductor light emitting device of claim 5, wherein the soldering layer has a thickness of 5000 Å

or more, and the anti-oxidation layer has a thickness of 1000 Å

or less.

7. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode, and

wherein the upper layer comprises;

a crack resistant layer having a first thermal expansion coefficient for preventing cracks in the semiconductor light emitting device during bonding; and

an anti-burst layer provided on the crack resistant layer, the anti-burst layer having a second thermal expansion coefficient higher than the first thermal expansion coefficient for preventing the crack resistant layer from getting burst.

8. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode, and

wherein the lower electrode has a top face and lateral faces, and surroundings of the lower electrode are exposed through the opening, and the electrical connection is adapted to encompass the top face and the lateral faces of the lower electrode.

9. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode, and

wherein a face having been etched during formation of the opening and thereby having a reduced height difference forms an upper rim of the opening.

10. The semiconductor light emitting device of claim 9, wherein the upper electrode comprises an ohmic contact pad being at least partly exposed through the opening, and a finger electrode extended from the ohmic contact pad, and the upper electrode is patterned in such a way that the upper electrode covers the electrical connection, without covering the finger electrode and a part of the ohmic contact pad connected with the finger electrode.

11. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode,

wherein the lower electrode is partly exposed through the opening, and the non-conductive reflective film is raised up at the edge of the lower electrode, and

wherein the upper rim of the opening is raised upwards higher than the top face of the non-conductive reflective film.

12. A semiconductor light emitting device, comprising:

a plurality of semiconductor layers grown sequentially on a growth substrate, the plurality of semiconductor layers including a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interpositioned between the first and second semiconductor layers, for generating light by electron-hole recombination;

a first electrode part, which is in electrical communication with the first semiconductor layer and supplies electrons or holes thereto;

a second electrode part, which is in electrical communication with the second semiconductor layer and supplies holes thereto if the first electrode part supplies electrons, or electrons if the first electrode part supplies holes; and

a non-conductive reflective film, which is formed on the plurality of semiconductor layers for reflecting the light generated in the active layer towards the growth substrate and has an opening formed therein,

wherein at least one of the first and second electrode parts includes a lower electrode exposed at least partly through the opening;

an upper electrode provided on the non-conductive reflective film; and

an electrical connection, which comes into contact with the lower electrode by passing through the opening and is in electrical communication with the upper electrode, and

wherein the device further comprises an upper electrode;

a separate bonding pad; and

an insulating layer provided between the bonding pad and the upper electrode, wherein the bonding pad and the upper electrode electrically communicate with each other through an opening formed in the insulating layer.