Optoelectronic system

• US 9,748,449 B2
• Filed: 03/13/2015
• Issued: 08/29/2017
• Est. Priority Date: 07/04/2003
• Status: Expired due to Term

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Hsieh, Min-Hsun, Han, Cheng-Nan, Hong, Steve Meng-Yuan, Liu, Hsin-Mao, Lee, Tsung-Xian
• Primary Examiner(s): Armand, Marc
• Assistant Examiner(s): Salerno, Sarah
• Application Number:
  US14/657,975
• Publication Number:
  US 20150188003A1
• Time in Patent Office: 900 Days
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/24137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/4918 being disposed on at least two different sides of the body, e.g. dual array
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/92 Specific sequence of method steps
• CPC Class Codes: H01L 2224/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/0756 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01007 : Nitrogen [N]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01031 : Gallium [Ga]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01094 : Plutonium [Pu]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10329 : Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/10349 : Aluminium gallium indium phosphide [AlGaInP]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12043 : Photo diode
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/0093 : Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/385 : the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/405 : Reflective materials
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/504 : Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/507 : the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/508 : having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin

Abstract

An embodiment of the invention discloses an optoelectronics system. The optoelectronic system includes an optoelectronic element having a first width; an adhesive material enclosing the optoelectronic element and having a second width larger than the first width; a phosphor structure formed between the optoelectronic element and the adhesive material; and a transparent substrate formed on the adhesive material.

Claims

1. An optoelectronic system comprising:

an optoelectronic element, having an outermost lateral surface, a first width, an active layer, and a first electrode with an outermost surface;

an adhesive material enclosing the optoelectronic element in a configuration of exposing the outermost surface and not directly contacting the first electrode, and having a top surface, a bottom surface, and a second width larger than the first width;

a wavelength converting structure contacting the bottom surface; and

a substrate having a portion contacting the top surface,

wherein the portion of the substrate and the first electrode are arranged at opposite sides of the active layer.

2. The optoelectronic system of claim 1, wherein the adhesive material has a sidewall through which light emitted from the optoelectronic element is configured to escape from the optoelectronic system.

3. The optoelectronic system of claim 1, further comprising a fan-out electrode with an end exceeding beyond the outermost lateral surface.

4. The optoelectronic system of claim 1, wherein the wavelength converting structure substantially extends to a sidewall of the adhesive material.

5. The optoelectronic system of claim 1, wherein a ratio of the first width to the second width is A;

0.5≦

A≦

1.

6. The optoelectronic system of claim 1, wherein the adhesive material comprises silicone rubber, silicone resin, elastic PU, porous PU, or acrylic rubber.

7. The optoelectronic system of claim 1, wherein the substrate comprises silicone, glass, quartz, or ceramic.

8. The optoelectronic system of claim 1, wherein the wavelength converting structure comprises a first phosphor layer and a second phosphor layer overlapping the first phosphor layer.

9. The optoelectronic system of claim 1, wherein the wavelength converting structure comprises a first phosphor powder and a second phosphor powder.

10. The optoelectronic system of claim 1, wherein the adhesive material is formed in a structure comprising a flat surface on which the substrate is formed.

11. The optoelectronic system of claim 1, wherein the substrate directly contacts the adhesive material.

12. The optoelectronic system of claim 1, further comprising a fan-out electrode directly formed on the electrode and extending beyond the outermost lateral surface.

13. The optoelectronic system of claim 1, further comprising a fan-out electrode which is directly formed on the electrode and not directly connected to the wavelength converting structure.

14. The optoelectronic system of claim 1, further comprising a fan-out electrode having a width greater than that of the electrode.

15. The optoelectronic system of claim 1, wherein the optoelectronic element comprises a second electrode, the first electrode and the second electrode are arranged at a same side of the active layer.