Semiconductor light emitting device having convex portion made with different materials
First Claim
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1. A semiconductor light emitting device comprising:
- a substrate formed of a first material; and
a convex portion protruding from the substrate and comprising;
a first layer formed of the first material as that of the substrate; and
a second layer formed of a second material different from the first material and disposed on the first layer,wherein a second maximum height of the second layer is greater than a first maximum height of the first layer, the first maximum height and the second maximum height being measured in a thickness direction of the semiconductor light emitting device, andwherein the first maximum height of the first layer is measured from a surface of the substrate surrounding the convex portion.
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Abstract
A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.
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19 Claims
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1. A semiconductor light emitting device comprising:
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a substrate formed of a first material; and a convex portion protruding from the substrate and comprising; a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer, wherein a second maximum height of the second layer is greater than a first maximum height of the first layer, the first maximum height and the second maximum height being measured in a thickness direction of the semiconductor light emitting device, and wherein the first maximum height of the first layer is measured from a surface of the substrate surrounding the convex portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 16, 18)
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14. A semiconductor light emitting device comprising:
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a substrate made of a first material; a convex portion disposed on a surface of the substrate and comprising; a first layer made of the first material; and a second layer made of a second material different from the first material and disposed on the first layer; and a light emitting stack comprising; a first conductivity-type semiconductor layer; an active layer; and a second conductivity-type semiconductor layer, the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer sequentially disposed on the surface of the substrate on which the convex portion is disposed, wherein a first maximum height of the first layer ranges from 240 nm to 380 nm and a second maximum height of the second layer is 1.5 to 9 times the first maximum height of the first layer, the first maximum height and the second maximum height being measured in a thickness direction of the semiconductor light emitting device, and wherein the first maximum height of the first layer is measured from the surface of the substrate surrounding the convex portion. - View Dependent Claims (15, 17, 19)
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Specification