Semiconductor sensing device comprising conductive nanowires and manufacturing method thereof

• US 9,748,482 B2
• Filed: 12/09/2014
• Issued: 08/29/2017
• Est. Priority Date: 02/18/2014
• Status: Active Grant

• Current Assignee: E Ink Holdings Incorporated
• Original Assignee: E Ink Holdings Incorporated
• Inventors: Zan, Hsiao-Wen, Tsai, Chuang-Chuang, Yu, Pei-Chen, Chuang, Ming-Yen, Yeh, Chia-Chun
• Primary Examiner(s): Monbleau, Davienne
• Assistant Examiner(s): CRUZ, LESLIE PILAR
• Application Number:
  US14/564,106
• Publication Number:
  US 20150233851A1
• Time in Patent Office: 994 Days
• CPC Class Codes: G01N 27/125 Composition of the body, e.g. the composition of its sensitive layer
• CPC Class Codes: G01N 27/4141 specially adapted for gases
• CPC Class Codes: G01N 27/4146 involving nanosized elements, e.g. nanotubes, nanowires
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

A semiconductor sensing device that includes a nanowire conductive layer, a semiconductor sensing layer, and a conductive layer is provided. The nanowire conductive layer includes a plurality of connected conductive nanowires, and gaps are formed between the conductive nanowires. The semiconductor sensing layer is electrically connected to the nanowire conductive layer. The conductive layer is electrically connected to the semiconductor sensing layer. The semiconductor sensing layer is located between the nanowire conductive layer and the conductive layer. A manufacturing method of a semiconductor sensing device is also provided.

Claims

1. A semiconductor sensing device comprising:

a nanowire conductive layer comprising a plurality of connected conductive nanowires, wherein gaps are formed between the conductive nanowires;

a semiconductor sensing layer electrically connected to the nanowire conductive layer;

a conductive layer electrically connected to the semiconductor sensing layer, wherein the semiconductor sensing layer is located between the nanowire conductive layer and the conductive layer;

a substrate, the conductive layer being located between the semiconductor sensing layer and the substrate; and

a dielectric layer located between the semiconductor sensing layer and the conductive layer and between the semiconductor sensing layer and the substrate, wherein the conductive layer covers one portion of the substrate, the dielectric layer covers one portion of the conductive layer and another portion of the substrate, the semiconductor sensing layer covers the dielectric layer and another portion of the conductive layer exposed by the dielectric layer, and the nanowire conductive layer is located on the semiconductor sensing layer.

2. The semiconductor sensing device as recited in claim 1, wherein the conductive nanowires are connected in a random manner, so as to form the nanowire conductive layer.

3. The semiconductor sensing device as recited in claim 1, wherein the semiconductor sensing layer comprises a plurality of semiconductor sensing pillars extending along a direction from the conductive layer to the nanowire conductive layer.

4. The semiconductor sensing device as recited in claim 1, wherein a material of the semiconductor sensing layer comprises an organic semiconductor material.

5. The semiconductor sensing device as recited in claim 1, wherein a material of the semiconductor sensing layer comprises an inorganic semiconductor material.

6. The semiconductor sensing device as recited in claim 1, wherein a material of the semiconductor sensing layer comprises indium-gallium-zinc oxide, tin dioxide, zinc oxide, iron oxide, or a combination thereof.