LED structure with quasi-continuous spectrum and method of illumination

• US 9,750,105 B2
• Filed: 05/13/2015
• Issued: 08/29/2017
• Est. Priority Date: 05/13/2015
• Status: Active Grant

• Current Assignee: Illumipure Incorporated
• Original Assignee: illumiPure Corp.
• Inventors: Rantala, Juha
• Primary Examiner(s): Le, Tung X
• Assistant Examiner(s): CHAI, RAYMOND REI-YANG
• Application Number:
  US14/710,629
• Publication Number:
  US 20160338169A1
• Time in Patent Office: 839 Days
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H05B 45/20 Controlling the colour of the light
• CPC Class Codes: H05B 45/37 Converter circuits
• CPC Class Codes: Y02B 20/30 Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Abstract

A LED structure and a method of providing pulsed light energy synchronized with the photosynthesis process by an integrated LED structure. The LED structure comprises a substrate; a plurality of optically independent light emission areas on substrate; a light emitting semiconductor source of a first type mounted in part of the emission area(s); a light emitting semiconductor source of a second type mounted in part of the emission area(s); and wavelength conversion materials of at least two types. The first type is formed on the top of the said first type of light emitting semiconductor sources and the second type is formed on the top of the said second type of light emitting semiconductor sources.

The LED structure suits grow light systems that require dynamic luminaires with adjustable spectrum, tunable intensity and controllable pulse mode operation.

Claims

1. A LED structure comprising:

a substrate;

a plurality of optically independent light emission areas on substrate;

a light emitting semiconductor source of a first type mounted in part of the emission area(s);

a light emitting semiconductor source of a second type mounted in part of the emission area(s);

a wavelength conversion material of the first type formed on the top of the said first type of light emitting semiconductor sources; and

a wavelength conversion material of the second type formed on the top of the said second type of light emitting semiconductor sources

wherein;

at least one of the light emission areas has a dual layer structure formed of two wavelength conversion materials layered upon each other;

the upper wavelength conversion layer has excitation maximum between 415 and 435 nm and emission maximum between 620 and 640 nm and full width half maximum of 50 nm;

the lower wavelength conversion layer has excitation maximum between 430 and 450 nm and emission maximum between 650 and 670 nm and full width half maximum of 50 nm; and

the light emission area has a set of light emitting components between 415 and 435 nm and between 430 and 450 nm beneath the wavelength conversion material layers.