Pressure sensor and pressure sensing method
First Claim
Patent Images
1. A pressure sensor comprising:
- a substrate;
a sensor thin film transistor (TFT) disposed on the substrate and comprising a gate insulating layer, wherein the gate insulating layer comprises an organic matrix in which piezoelectric inorganic nano-particles are dispersed;
a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and
a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense pressure based on the remnant polarization value.
1 Assignment
0 Petitions
Accused Products
Abstract
A pressure sensor and a pressure sensing method are provided. The pressure sensor includes a substrate; a sensor thin film transistor (TFT) disposed on the substrate and including a gate insulating layer, wherein the gate insulating layer includes an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense a pressure based on the remnant polarization value.
16 Citations
19 Claims
-
1. A pressure sensor comprising:
-
a substrate; a sensor thin film transistor (TFT) disposed on the substrate and comprising a gate insulating layer, wherein the gate insulating layer comprises an organic matrix in which piezoelectric inorganic nano-particles are dispersed; a power unit configured to apply an alternating current (AC) signal to a gate of the sensor TFT; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current which is generated in response to the AC signal and detected by the sensor TFT, and to sense pressure based on the remnant polarization value. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A pressure sensing method comprising:
-
applying an alternating current (AC) signal to a gate of a sensor thin film transistor (TFT) comprising a piezoelectric gate insulating layer; detecting a drain current from the sensor TFT, the drain current being generated in response to the AC signal; obtaining a remnant polarization value based on the drain current; and sensing a pressure based on the remnant polarization value, wherein when an amplitude of the AC signal applied to the gate is VGamp, an amplitude of the drain current is IDamp, and an average drain current value is IDmean, the remnant polarization value is in proportion to a value of - View Dependent Claims (14, 15, 16, 17, 18)
-
-
19. A pressure sensor comprising:
-
a substrate comprised of a flexible material; a sensor thin film transistor (TFT) disposed on the substrate and comprising a gate insulating layer, wherein the gate insulating layer comprises a combination of an organic material and an inorganic material; and a pressure sensing unit configured to obtain a remnant polarization value based on a drain current detected by the sensor TFT, and to sense pressure based on the remnant polarization value, wherein when an amplitude of an AC signal applied to a gate of the sensor TFT is VGamp, an amplitude of the drain current is IDamp, and an average drain current value is IDmean, the remnant polarization value is in proportion to a value of
-
Specification